BLF546 NXP Semiconductors, BLF546 Datasheet - Page 8

• Manufacturer Part Number: BLF546
• Description: RF MOSFET Power BULK TNS-RFPR
• Manufacturer: NXP Semiconductors

Specifications of BLF546

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 0.6 Ohms
• Transistor Polarity: N-Channel
• Configuration: Dual Common Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9 A
• Power Dissipation: 145 W
• Maximum Operating Temperature: + 200 C
• Package / Case: SOT-268-5
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF546,112

Philips Semiconductors
List of components (see Fig.11)
2003 Sep 22
handbook, full pagewidth
C1, C2
C3
C4, C6, C21, C22
C5
C7, C10, C14, C15 multilayer ceramic chip capacitor;
C8, C11, C12, C17 multilayer ceramic chip capacitor
C9
C13, C16
UHF push-pull power MOS transistor
COMPONENT
f = 500 MHz.
50
input
L2
L1
L3
multilayer ceramic chip capacitor;
note 1
multilayer ceramic chip capacitor;
note 1
film dielectric trimmer
multilayer ceramic chip capacitor;
note 2
note 1
multilayer ceramic chip capacitor;
note 2
electrolytic capacitor
C1
C1
V BIAS
V BIAS
L4
L5
C3
L6
L7
DESCRIPTION
C4
R1
R5
Fig.11 Test circuit for class-B operation.
C5
C10
C7
L8
L9
R2
R6
C6
L10 L12
L11 L13
R3
R4
C11
C8
C9
BLF546
D.U.T.
8
33 pF, 500 V
11 pF, 500 V
2 to 9 pF
12 pF, 500 V
390 pF, 500 V
100 nF, 50 V
39 pF, 500 V
4.7 F, 63 V
R7
R8
C12
C14
C15
C17
VALUE
L14
L15
C18
V D
V D
L19
L16
L17
L18
C13
C16
C19 C20
L20
L21
L22
L23
DIMENSIONS
C21
L25
MDA530
L24
C22
C23
C24
Product specification
L26
L28
CATALOGUE NO.
L27
2222 809 09005
2222 852 47104
2222 030 38478
BLF546
output
50