BLF6G22LS-130 NXP Semiconductors, BLF6G22LS-130 Datasheet - Page 4
BLF6G22LS-130
Manufacturer Part Number
BLF6G22LS-130
Description
RF MOSFET Small Signal LDMOS TNS
Manufacturer
NXP Semiconductors
Datasheet
1.BLF6G22LS-130.pdf
(11 pages)
Specifications of BLF6G22LS-130
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.135 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Continuous Drain Current
34 A
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Package / Case
SOT502B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLF6G22LS-130,112
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
NXP Semiconductors
BLF6G22LS-130_1
Product data sheet
7.2 One-tone CW
Fig 1.
V
One-tone CW power gain and drain efficiency as functions of load power;
typical values
DS
= 28 V; I
Dq
(dB)
G
= 1100 mA; f = 2170 MHz.
p
Rev. 01 — 23 May 2008
19
17
15
13
0
40
80
120
BLF6G22LS-130
G
D
P
p
001aai093
L
(W)
160
Power LDMOS transistor
60
40
20
0
(%)
D
© NXP B.V. 2008. All rights reserved.
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