MBR2560CT-E3/45 Vishay, MBR2560CT-E3/45 Datasheet - Page 3
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MBR2560CT-E3/45
Manufacturer Part Number
MBR2560CT-E3/45
Description
DIODE SCHOT 25A 60V DUAL TO220-3
Manufacturer
Vishay
Datasheet
1.MBR2535CT-E345.pdf
(5 pages)
Specifications of MBR2560CT-E3/45
Voltage - Forward (vf) (max) @ If
820mV @ 30A
Current - Reverse Leakage @ Vr
200µA @ 60V
Current - Average Rectified (io) (per Diode)
15A
Voltage - Dc Reverse (vr) (max)
60V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Product
Schottky Diodes
Peak Reverse Voltage
60 V
Forward Continuous Current
30 A
Max Surge Current
150 A
Configuration
Dual Common Cathode
Forward Voltage Drop
0.82 V
Maximum Reverse Leakage Current
200 uA
Operating Temperature Range
- 65 C to + 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MBR2560CT-E3/45
Manufacturer:
VISHAY/威世
Quantity:
20 000
RATINGS AND CHARACTERISTICS CURVES
(T
Document Number: 88675
Revision: 15-Jun-10
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
A
= 25 °C unless otherwise noted)
0.01
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
150
125
100
100
1.0
0.1
30
24
18
12
75
50
25
10
6
0
0
0
1
0
Fig. 1 - Forward Current Derating Curve
0.1
T
J
= 150 °C
Instantaneous Forward Voltage (V)
0.2
Resistive or Inductive Load
Number of Cycles at 60 Hz
Case Temperature (°C)
0.3
Current Per Diode
50
0.4
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
T
8.3 ms Single Half Sine-Wave
J
For technical questions within your region, please contact one of the following:
MBR2550CT & MBR2560CT
0.5
= T
MBR2535CT - MBR2545CT
10
T
J
J
= 25 °C
Max.
0.6
Pulse Width = 300 µs
1 % Duty Cycle
100
0.7
0.8
0.9
150
100
1.0
MBR(F,B)2535CT thru MBR(F,B)2560CT
10 000
0.001
1000
Fig. 6 - Typical Transient Thermal Impedance Per Diode
0.01
100
100
100
0.1
0.1
10
10
1
Fig. 4 - Typical Reverse Characteristics Per Diode
1
0.01
0.1
Fig. 5 - Typical Junction Capacitance Per Diode
0
DiodesEurope@vishay.com
Vishay General Semiconductor
Percent of Rated Peak Reverse Voltage (%)
MBR2550CT & MBR2560CT
MBR2535CT - MBR2545CT
20
MBR2535CT - MBR2545CT
MBR2550CT & MBR2560CT
0.1
T
J
= 125 °C
t - Pulse Duration (s)
Reverse Voltage (V)
1
T
40
J
= 75 °C
1
60
T
10
J
= 25 °C
T
f = 1.0 MHz
V
J
sig
10
= 25 °C
= 50 mVp-p
80
www.vishay.com
100
100
100
3