BAV70,215 NXP Semiconductors, BAV70,215 Datasheet - Page 3

DIODE SW DBL 100V 215MA HS SOT23

BAV70,215

Manufacturer Part Number
BAV70,215
Description
DIODE SW DBL 100V 215MA HS SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAV70,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Voltage - Forward (vf) (max) @ If
1V @ 50mA
Current - Reverse Leakage @ Vr
500nA @ 80V
Current - Average Rectified (io) (per Diode)
215mA (DC)
Voltage - Dc Reverse (vr) (max)
100V
Reverse Recovery Time (trr)
4ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Surface Mount
Product
Switching Diodes
Peak Reverse Voltage
100 V
Forward Continuous Current
0.215 A
Max Surge Current
4 A
Configuration
Dual Common Cathode
Recovery Time
4 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
0.5 uA
Operating Temperature Range
+ 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Rectifier Type
Switching Diode
Peak Rep Rev Volt
100V
Avg. Forward Curr (max)
0.215A
Rev Curr
0.5uA
Peak Non-repetitive Surge Current (max)
4A
Forward Voltage
1.25V
Operating Temp Range
-65C to 150C
Package Type
TO-236AB
Rev Recov Time
4ns
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-1622-2
933184910215
BAV70 T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BAV70,215
Manufacturer:
NXP Semiconductors
Quantity:
20 000
Part Number:
BAV70,215
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
4. Marking
5. Limiting values
BAV70_SER_7
Product data sheet
Table 5.
[1]
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Type number
BAV70
BAV70M
BAV70S
BAV70T
BAV70W
Symbol
Per diode
V
V
I
I
I
F
FRM
FSM
RRM
R
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Marking codes
Limiting values
Parameter
repetitive peak reverse
voltage
reverse voltage
forward current
repetitive peak forward
current
non-repetitive peak forward
current
BAV70
BAV70M
BAV70S
BAV70T
BAV70W
BAV70
BAV70M
BAV70S
BAV70T
BAV70W
Rev. 07 — 27 November 2007
Conditions
T
T
T
T
T
square wave
amb
s
s
s
amb
t
t
t
= 90 C
= 60 C
= 90 C
p
p
p
= 1 s
= 1 ms
= 1 s
Marking code
A4*
S4
A4*
A4
A4*
25 C
25 C
High-speed switching diodes
[1]
[1]
BAV70 series
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
© NXP B.V. 2007. All rights reserved.
Max
100
100
215
150
250
150
175
450
500
450
500
500
4
1
0.5
Unit
V
V
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
A
A
A
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