1N5408 Fairchild Semiconductor, 1N5408 Datasheet - Page 2

DIODE GEN PURP 1000V 3A DO-201AD

1N5408

Manufacturer Part Number
1N5408
Description
DIODE GEN PURP 1000V 3A DO-201AD
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of 1N5408

Voltage - Forward (vf) (max) @ If
1.2V @ 3A
Voltage - Dc Reverse (vr) (max)
1000V (1kV)
Current - Average Rectified (io)
3A
Current - Reverse Leakage @ Vr
5µA @ 1000V
Diode Type
Standard
Speed
Standard Recovery >500ns, > 200mA (Io)
Capacitance @ Vr, F
30pF @ 4V, 1MHz
Mounting Type
Through Hole
Package / Case
DO-201AD, Axial
Product
Standard Recovery Rectifier
Configuration
Single
Reverse Voltage
1000 V
Forward Voltage Drop
1.2 V
Forward Continuous Current
3 A @ Ta=75C
Max Surge Current
200 A
Reverse Current Ir
5 uA
Power Dissipation
6.25 W
Mounting Style
Through Hole
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
1N5408
1N5408FSTR

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. 2001 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 1. Forward Current Derating Curve
Figure 3. Non-Repetitive Surge Current
4
3
2
1
0
200
160
120
25
80
40
0
1
50
2
Number of Cycles at 60Hz
Ambient Temperature [ºC]
75
5
100
10
9.5mm LEAD LENGTH
125
T = 105 C
A
100
20
50
10
150
5
1
0.1
º
175
50
Figure 5. Total Capacitance
100
Reverse Voltage, V
200
1
Figure 4. Reverse Current vs Reverse Voltage
5
Figure 2. Forward Voltage Characteristics
0.01
100
10
100
0.1
0.1
10
R
10
1
5
1
[V]
0.4
0
Percent of Rated Peak Reverse Voltage [%]
20
0.6
General Purpose Rectifiers
50 100
Forward Voltage, V
40
0.8
60
1
1.2
80
Pulse Width = 200∝ ∝ ∝ ∝ S
1% Duty Cycle
1N5400-1N5408, Rev C1, June 2006
T = 25 C
T = 25 C
A
J
F
100
1.4
[V]
º
º
120
1.6
(continued)
140
1.8

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