VF30100S-E3/4W Vishay, VF30100S-E3/4W Datasheet

DIODE SCHOTTKY 30A 100V ITO220AB

VF30100S-E3/4W

Manufacturer Part Number
VF30100S-E3/4W
Description
DIODE SCHOTTKY 30A 100V ITO220AB
Manufacturer
Vishay
Datasheet

Specifications of VF30100S-E3/4W

Voltage - Forward (vf) (max) @ If
910mV @ 30A
Voltage - Dc Reverse (vr) (max)
100V
Current - Average Rectified (io)
30A
Current - Reverse Leakage @ Vr
1mA @ 100V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads, Isolated), ITO-220AB
Product
Schottky Rectifiers
Peak Reverse Voltage
100 V
Forward Continuous Current
30 A
Max Surge Current
250 A
Configuration
Single Dual Anode
Forward Voltage Drop
1 V
Maximum Reverse Leakage Current
350 uA
Operating Temperature Range
- 40 C to + 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
VF30100S-E3/4WGI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
VF30100S-E3/4W
Quantity:
70 000
Document Number: 88941
Revision: 23-Oct-09
PRIMARY CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
Non-repetitive avalanche energy at T
Peak repetitive reverse current
at t
Voltage rate of change (rated V
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
Operating junction and storage temperature range
p
PIN 1
PIN 3
NC
= 2 μs, 1 kHz, T
A
K
V
TO-220AB
TO-263AB
V30100S
VB30100S
F
at I
T
V
J
I
I
High-Voltage Trench MOS Barrier Schottky Rectifier
F(AV)
FSM
RRM
F
max.
= 30 A
HEATSINK
NC
CASE
K
PIN 2
J
A
= 38 °C ± 2 °C
1
2
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
TMBS
3
For technical questions within your region, please contact one of the following:
R
)
A
= 25 °C unless otherwise noted)
®
J
K
= 25 °C, L = 90 mH
PIN 1
PIN 3
PIN 1
PIN 3
TO-262AA
ITO-220AB
VF30100S
VI30100S
Ultra Low V
150 °C
0.69 V
100 V
250 A
30 A
V30100S, VF30100S, VB30100S, VI30100S
PIN 2
PIN 2
K
1
1
New Product
2
2
SYMBOL
T
3
3
dV/dt
J
V
F
I
I
I
V
, T
F(AV)
E
FSM
RRM
RRM
AC
AS
= 0.39 V at I
STG
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of
• Solder bath temperature 275 °C maximum, 10 s, per JESD
• Compliant to RoHS directive 2002/95/EC and in
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
V30100S
245 °C (for TO-263AB package)
22-B106 (for TO-220AB, ITO-220AB,
package)
accordance to WEEE 2002/96/EC
F
DiodesEurope@vishay.com
= 5 A
Vishay General Semiconductor
VF30100S
- 40 to + 150
10 000
1500
100
250
230
1.0
30
VB30100S
VI30100S
and TO-262AA
www.vishay.com
UNIT
V/μs
mJ
°C
A
A
A
V
V
1

Related parts for VF30100S-E3/4W

VF30100S-E3/4W Summary of contents

Page 1

... Operating junction and storage temperature range Document Number: 88941 For technical questions within your region, please contact one of the following: Revision: 23-Oct-09 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, New Product V30100S, VF30100S, VB30100S, VI30100S Ultra Low FEATURES • Trench MOS Schottky technology ITO-220AB • ...

Page 2

... Pulse test: 300 μs pulse width duty cycle Pulse test: Pulse width ≤ (2) THERMAL CHARACTERISTICS (T PARAMETER SYMBOL Typical thermal resistance R ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N TO-220AB V30100S-E3/4W ITO-220AB VF30100S-E3/4W TO-263AB VB30100S-E3/4W TO-263AB VB30100S-E3/8W TO-262AA VI30100S-E3/4W RATINGS AND CHARACTERISTICS CURVES ( °C unless otherwise noted Resistive or Inductive Load 30 ...

Page 3

... Reverse Voltage (V) Fig Typical Junction Capacitance Document Number: 88941 For technical questions within your region, please contact one of the following: Revision: 23-Oct-09 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, New Product V30100S, VF30100S, VB30100S, VI30100S Vishay General Semiconductor 10 1 0.1 0.01 0.001 1.0 1.2 0.01 Fig ...

Page 4

... V30100S, VF30100S, VB30100S, VI30100S Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.154 (3.91) 0.360 (9.14) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) PIN 0.350 (8.89 0.330 (8.38) ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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