PMBD6050,215 NXP Semiconductors, PMBD6050,215 Datasheet - Page 3

• Manufacturer Part Number: PMBD6050,215
• Description: DIODE HIGH SPEED SWITCHING SOT23
• Manufacturer: NXP Semiconductors

Specifications of PMBD6050,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Voltage - Dc Reverse (vr) (max): 70V
• Current - Average Rectified (io): 215mA (DC)
• Current - Reverse Leakage @ Vr: 100nA @ 50V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 4ns
• Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 85 V
• Forward Voltage Drop: 1.25 V at 0.15 A
• Recovery Time: 4 ns
• Forward Continuous Current: 0.215 A
• Max Surge Current: 4 A
• Reverse Current Ir: 0.1 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4877-2; 933859220215; PMBD6050 T/R; PMBD6050 T/R; PMBD6050,215

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on an FR4 printed-circuit board.
2004 Jan 14
V
V
I
I
I
P
T
T
F
FRM
FSM
SYMBOL
stg
j
RRM
R
tot
High-speed diode
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward
current
total power dissipation
storage temperature
junction temperature
PARAMETER
note 1; see Fig.2
square wave; T
surge; see Fig.4
T
amb
t = 1 µs
t = 1 ms
t = 1 s
= 25 °C; note 1
3
CONDITIONS
j
= 25 °C prior to
−
−
−
−
−
−
−
−
−65
−
MIN.
85
70
215
500
4
1
0.5
250
+150
150
PMBD6050
Product data sheet
MAX.
V
V
mA
mA
A
A
A
mW
°C
°C
UNIT