RB051L-40TE25 Rohm Semiconductor, RB051L-40TE25 Datasheet
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Manufacturer Part Number
RB051L-40TE25
Description
DIODE SCHOTTKY 20V 3A SOD106
Manufacturer
Rohm Semiconductor
Specifications of RB051L-40TE25
Diode Type
Schottky
Voltage - Forward (vf) (max) @ If
450mV @ 3A
Voltage - Dc Reverse (vr) (max)
20V
Current - Average Rectified (io)
3A
Current - Reverse Leakage @ Vr
1mA @ 20V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
SOD-106, PMDS
Repetitive Reverse Voltage Vrrm Max
40V
Forward Current If(av)
3A
Forward Voltage Vf Max
450mV
Forward Surge Current Ifsm Max
70A
Operating Temperature Range
-40°C To +125°C
Product
Schottky Diodes
Peak Reverse Voltage
40 V
Forward Continuous Current
3 A
Max Surge Current
70 A
Configuration
Single
Forward Voltage Drop
0.45 V
Maximum Reverse Leakage Current
1000 uA @ 20 V
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
RB051L-40TE25TR
Available stocks
Part Number:
RB051L-40TE25
Manufacturer:
Rohm Semiconductor
Part Number:
RB051L-40TE25
Part Number:
RB051L-40TE25
Part Number:
RB051L-40TE25
General rectification
1)Small power mold type.（PMDS）
2)Low VF
3)High reliability
Silicon epitaxial planar
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forwarfd current
Forward current surge peak （60Hz・1cyc）
Junction temperature
Storage temperature
(*1) Mounted on epoxyboard. 180°Half sine wave
Forward voltage
Reverse current
RB051L-40
Applications
Features
Construction
Absolute maximum ratings (Ta=25°C)
Electrical characteristics (Ta=25°C)
Schottky Barrier Diode
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
Parameter
Parameter
Taping specifications (Unit : mm)
Symbol
Symbol
Tstg
V
I
V
V
V
FSM
I
I
Io
Tj
R
R
RM
F
F
R
1
2
1
2
Dimensions (Unit : mm)
ROHM : PMDS
JEDEC : SOD-106
Min.
①
①
1.5±0.2
2.6±0.2
3
2.9±0.1
-
-
-
-
1
②
40 to 125
②
Limits
4.0±0.1
125
Typ.
1/3
40
20
70
3
-
-
-
-
Manufacture Date
2.0±0.05
Max.
0.35
0.45
150
4.0±0.1
1
2.0±0.2
Unit
Unit
mA
0.1±0.02
0.1
μA
°C
°C
V
V
A
A
V
V
φ1.55±0.05
I
I
V
V
F
F
=1.0A
=3.0A
R
R
=20V
=15V
Structure
Land size figure (Unit : mm)
PMDS
φ1.55
Data Sheet
Conditions
2.0
2011.04 - Rev.B
0.3
2.8MAX
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RB051L-40TE25 Summary of contents
... Schottky Barrier Diode RB051L-40 Applications General rectification Features 1)Small power mold type.（PMDS） 2)Low VF 3)High reliability Construction Silicon epitaxial planar Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forwarfd current Forward current surge peak （60Hz・1cyc） ...
... RB051L-40 10 Ta=75℃ 1 Ta=125℃ Ta=25℃ Ta=-25℃ 0.1 0.01 0.001 0 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 400 Ta=25℃ IF=3A 390 n=30pcs 380 370 360 AVE:383.2mV 350 VF DISPERSION MAP 300 1cyc Ifsm 250 8.3ms 200 ...
... RB051L- D=1 Sin(θ＝180 REVERSE VOLTAGE:VR(V) VR-P CHARACTERISTICS break at 30kV AVE:15.1kV C=200pF C=100pF R=0Ω R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved D=t/T VR=20V T Tj=125℃ 3 D=1/2 2 Sin(θ＝180 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ ...
ROHM Co., Ltd. All rights reserved Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ Notice ...
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