MBR0520LT1G ON Semiconductor, MBR0520LT1G Datasheet - Page 2

• Manufacturer Part Number: MBR0520LT1G
• Description: DIODE SCHOTTKY 20V 0.5A SOD123
• Manufacturer: ON Semiconductor

Specifications of MBR0520LT1G

• Voltage - Forward (vf) (max) @ If: 385mV @ 500mA
• Voltage - Dc Reverse (vr) (max): 20V
• Current - Average Rectified (io): 500mA
• Current - Reverse Leakage @ Vr: 250µA @ 20V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Rectifier Type: Schottky Diode
• Configuration: Single
• Peak Rep Rev Volt: 20V
• Avg. Forward Curr (max): 0.5
• Rev Curr: 250uA
• Peak Non-repetitive Surge Current (max): 5.5A
• Forward Voltage: 0.385V
• Operating Temp Range: -65C to 125C
• Package Type: SOD-123
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2
• Product: Schottky Diodes
• Peak Reverse Voltage: 20 V
• Forward Continuous Current: 0.5 A
• Max Surge Current: 5.5 A
• Forward Voltage Drop: 0.385 V
• Maximum Reverse Leakage Current: 250 uA
• Operating Temperature Range: - 65 C to + 125 C
• Mounting Style: SMD/SMT
• Current, Forward: 0.5 A
• Current, Reverse: 8 mA
• Current, Surge: 5.5 A
• Primary Type: Schottky Barrier
• Temperature, Junction, Maximum: +125 °C
• Temperature, Operating: -65 to +125 °C
• Voltage, Forward: 0.385 V
• Voltage, Reverse: 20 V
• Dc: 09+
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Compliant
• Other names: MBR0520LT1GOSTR

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2%.
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Non−Repetitive Peak Surge Current
Storage Temperature Range
Operating Junction Temperature
Voltage Rate of Change (Rated V
ESD Ratings:
Thermal Resistance; Junction−to−Ambient (Note 1)
Thermal Resistance; Junction−to−Lead
Maximum Instantaneous Forward Voltage (Note 2)
Maximum Instantaneous Reverse Current (Note 2)
(i
(i
(V
(Rated DC Voltage = 20 V)
F
F
(Rated V
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
R
= 0.1 Amps)
= 0.5 Amps)
= 10 V)
R
, T
L
= 90°C)
R
)
Rating
Rating
MBR0520LT1, MBR0520LT3
Human Body Model = 3B
http://onsemi.com
Machine Model = C
2
Symbol
Symbol
V
V
I
dv/dt
R
I
R
F(AV)
T
RWM
FSM
RRM
V
T
v
I
qJA
stg
qJL
R
R
F
J
T
T
J
J
250 mA
75 mA
0.300
0.385
= 25°C
= 25°C
−65 to +150
−65 to +125
> 8000
Value
Value
> 400
1000
206
150
0.5
5.5
20
T
T
J
J
0.220
0.330
= 100°C
= 100°C
5 mA
8 mA
°C/W
°C/W
V/ms
Unit
Unit
mA
°C
°C
V
A
A
V
V