MBRM120ET3G ON Semiconductor, MBRM120ET3G Datasheet
MBRM120ET3G
Specifications of MBRM120ET3G
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MBRM120ET3G Summary of contents
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MBRM120E Surface Mount Schottky Power Rectifier ® POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop−reverse current tradeoff. The advanced packaging techniques provide ...
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... Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2%. ORDERING INFORMATION Device MBRM120ET1 MBRM120ET1G MBRM120ET3 MBRM120ET3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MBRM120E , T = 130°C) ...
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T = 150° 100°C J 1.0 0.1 0.2 0 INSTANTANEOUS FORWARD VOLTAGE (VOLTS) F Figure 1. Typical Forward Voltage 100E−3 10E− 150°C 1E−3 J 100E− 100°C J 10E−6 1E−6 T ...
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V , REVERSE VOLTAGE (VOLTS) R Figure 7. Capacitance * Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re- verse ...
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Rtjl(t) = Rtjl*r(t) 0.001 0.00001 0.0001 0.001 Figure 9. Thermal Response Junction to Lead 1.0 50% 20% 0.1 10% 5.0% 0.01 2.0% 1.0% 0.001 0.00001 0.0001 0.001 Figure 10. Thermal Response ...
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... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. POWERMITE is a registered trademark of and used under a license from Microsemi Corporation. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...