SDT12S60 Infineon Technologies, SDT12S60 Datasheet - Page 2

• Manufacturer Part Number: SDT12S60
• Description: SCHOTTKY 600V 12A TO220-2-2
• Manufacturer: Infineon Technologies
• Series: thinQ!™r

Specifications of SDT12S60

• Package / Case: TO-220-2
• Voltage - Forward (vf) (max) @ If: 1.7V @ 12A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 12A (DC)
• Current - Reverse Leakage @ Vr: 400µA @ 600V
• Diode Type: Silicon Carbide Schottky
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Capacitance @ Vr, F: 450pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Product: Schottky Diodes
• Peak Reverse Voltage: 600 V
• Forward Continuous Current: 12 A
• Max Surge Current: 36 A
• Configuration: Single
• Forward Voltage Drop: 1.7 V
• Maximum Reverse Leakage Current: 400 uA
• Operating Temperature Range: - 55 C to + 175 C
• Mounting Style: Through Hole
• Technology: thinQ!™
• V: 600.0 V
• If (typ): 12.0 A
• Qc (typ): 30.0 nC
• Package: TO-220 (decapped middle leg)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SDT12S60IN; SDT12S60X; SDT12S60XK; SDT12S60XTIN; SDT12S60XTIN; SP000013825

Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
Electrical Characteristics, at T
Parameter
Static Characteristics
Diode forward voltage
I
I
Reverse current
V
V
Rev. 2.3
F
F
R
R
=12A, T
=12A, T
=600V, T
=600V, T
j
j
=25°C
=150°C
j
j
=25°C
=150°C
j
= 25 °C, unless otherwise specified
Page 2
Symbol
R
R
Symbol
V
I
R
thJC
thJA
F
min.
min.
-
-
-
-
-
-
Values
Values
typ.
100
typ.
1.5
1.7
40
-
-
max.
max.
2000
1.7
400
1.7
2.1
SDT12S60
SDT12S60
62
2008-06-03
Unit
K/W
Unit
V
µA