BY448GP-E3/54 Vishay, BY448GP-E3/54 Datasheet - Page 2

• Manufacturer Part Number: BY448GP-E3/54
• Description: DIODE 1.5A 1650V SOD57
• Manufacturer: Vishay

Specifications of BY448GP-E3/54

• Diode Type: Standard
• Voltage - Forward (vf) (max) @ If: 1.6V @ 3A
• Voltage - Dc Reverse (vr) (max): 1650V (1.65kV)
• Current - Average Rectified (io): 1.5A
• Current - Reverse Leakage @ Vr: 5µA @ 1650V
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 20µs
• Mounting Type: Through Hole
• Package / Case: SOD-57, Axial
• Product: Standard Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 1650 V
• Forward Voltage Drop: 1.6 V @ 3 A
• Recovery Time: 20000 ns
• Forward Continuous Current: 1.5 A @ Ta=50C
• Max Surge Current: 40 A
• Reverse Current Ir: 5 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Repetitive Reverse Voltage Vrrm Max: 1.65kV
• Forward Current If(av): 1.5A
• Forward Voltage Vf Max: 1.6V
• Reverse Recovery Time Trr Max: 20µs
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

BY448 , BY458
Vishay Semiconductors
TYPICAL CHARACTERISTICS (T
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148
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
16417
16418
Fig. 1 - Typ. Thermal Resistance vs. Lead Length
0.001
0.01
120
100
949101
Fig. 2 - Forward Current vs. Forward Voltage
100
2.5
2.0
1.5
1.0
0.5
0.1
80
60
40
20
10
0
0
1
0
0
0
PCB: d = 25 mm
R
0.5
T
thJA
T
j
= 150 °C
amb
T
25
5
l
L
= 100 K/W
1
= constant
V
- Ambient Temperature (°C)
F
l - Lead Length (mm)
T
1.5 2
j
- Forward Voltage (V)
10
= 25 °C
50
l
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For technical questions within your region, please contact one of the following:
2.5
75
15
3
half sine wave
R
100
thJA
V
20
l = 10 mm
R
3.5
= V
= 45 K/W
RRM
amb
4
125
25
Standard Avalanche Sinterglass
4.5
= 25 °C, unless otherwise specified)
150
30
5
Diode
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature
16419
16420
16421
Fig. 4 - Reverse Current vs. Junction Temperature
1000
Fig. 6 - Diode Capacitance vs. Reverse Voltage
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100
400
350
300
250
200
150
100
10
35
30
25
20
15
10
50
1
5
0
0
25
0.1
25
V
R
V
T
= V
R
T
j
50
= V
50
- Junction Temperature (°C)
j
V
RRM
- Junction Temperature (°C)
R
RRM
- Reverse Voltage (V)
1
P
75
R
75
P
R
- Limit at 80 % V
- Limit at 100 % V
100
100
10
Document Number: 86006
f = 1 MHz
125
R
125
R
Rev. 1.7, 09-Aug-10
150
100
150