RB050L-60TE25 Rohm Semiconductor, RB050L-60TE25 Datasheet

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... Schottky barrier diode RB050L-60 Applications General rectification Features 1)Small power mold type. (PMDS) 2)Low I R 3)High reliability Construction Silicon epitaxial planar Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current (*1) Average rectified forward current (*2) Forward current surge peak (60Hz・1cyc) ...

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... RB050L-60 10 Ta=25C Ta=75C 1 Ta=125C Ta=-25C 0.1 0.01 0 0.1 0.2 0.3 0.4 0.5 FORWARD VOLTAGE：V ( CHARACTERISTICS F F 0.52 Ta=25C 0.51 I =3A F n=50pcs 0.5 0.49 0.48 0.47 AVE:0.4884V 0.46 V DISPERSION MAP F 300 250 200 AVE:207.4A 150 1cyc ...

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... RB050L-60 0.6 0.5 0.4 0.3 D=1/2 0.2 DC 0.1 Sin(θ＝180 REVERSE VOLTAGE:V ( CHARACTERISTICS break at 30kV AVE:13.02kV 5 0 C=200pF C=100pF R=0 R=1.5k ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 　 5.0 4 4.0 t D=t/T 3 3.0 Tj=150C 2 ...

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