STTH1R04Q STMicroelectronics, STTH1R04Q Datasheet - Page 4
STTH1R04Q
Manufacturer Part Number
STTH1R04Q
Description
DIODE ULT FAST 400V 1A DO-15
Manufacturer
STMicroelectronics
Datasheet
1.STTH1R04RL.pdf
(10 pages)
Specifications of STTH1R04Q
Voltage - Forward (vf) (max) @ If
1.5V @ 1A
Voltage - Dc Reverse (vr) (max)
400V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
5µA @ 400V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
30ns
Mounting Type
Through Hole
Package / Case
DO-204AC, DO-15, Axial
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
400 V
Forward Voltage Drop
1.5 V
Recovery Time
30 ns
Forward Continuous Current
1 A
Max Surge Current
30 A
Reverse Current Ir
5 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STTH1R04Q
Manufacturer:
ST
Quantity:
50 000
Characteristics
4/10
Figure 5.
Figure 7.
Figure 9.
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
100
70
65
60
55
50
45
40
35
30
25
20
15
10
10
5
0
1.E-02
1
10
1
Single pulse
S
cu
SMA
=1cm²
1.E-01
Relative variation of thermal
impedance junction to lead
versus pulse duration, SMA
Junction capacitance versus
reverse voltage applied (typical
values)
Reverse recovery time versus
dI
F
/dt (typical values)
10
1.E+00
dI
F
t
V
/dt(A/µs)
P
100
(s)
R
(V)
T
T
j
j
=25 °C
1.E+01
=125 °C
100
1.E+02
V
OSC
F=1MHz
T
V
=30mV
j
=25°C
I
R
F
=320 V
= 1 A
RMS
1.E+03
1000
1000
Figure 6.
Figure 8.
Figure 10. Peak reverse recovery current
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
40
36
32
28
24
20
16
12
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
8
4
0
1.E-03
10
10
V
V
Single pulse
I
R
I
R
S
F
F
=320 V
= 1 A
=320 V
cu
= 1 A
SMB
=1cm²
1.E-02
Relative variation of thermal
impedance junction to lead
versus pulse duration, SMB
Reverse recovery charges versus
dI
versus dI
F
/dt (typical values)
1.E-01
F
/dt (typical values)
1.E+00
100
100
T
T
T
T
j
j
=125 °C
=125 °C
j
j
=25 °C
=25 °C
t
P
(s)
1.E+01
dI
dI
F
F
1.E+02
/dt(A/µs)
/dt(A/µs)
STTH1R04
1.E+03
1000
1000