SIDC30D120E6 Infineon Technologies, SIDC30D120E6 Datasheet

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SIDC30D120E6

Manufacturer Part Number
SIDC30D120E6
Description
DIODE FAST SW 1200V 35A WAFER
Manufacturer
Infineon Technologies
Datasheet

Specifications of SIDC30D120E6

Voltage - Forward (vf) (max) @ If
1.9V @ 35A
Voltage - Dc Reverse (vr) (max)
1200V (1.2kV)
Current - Average Rectified (io)
35A (DC)
Current - Reverse Leakage @ Vr
27µA @ 1200V
Diode Type
Standard
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
Wafer
Packages
--
Technology
Emitter Controlled Diode
Vds (max)
1,200.0 V
If (max)
35.0 A
If,sm (max)
70.0 A
Vf (typ)
1.9 V
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Other names
SP000011946
Fast switching diode chip in EMCON-Technology
FEATURES:
Chip Type
SIDC30D120E6
MECHANICAL PARAMETER:
Raster size
Area total / active
Anode pad size
Thickness
Wafer size
Flat position
Max. possible chips per wafer
Passivation frontside
Anode metallisation
Cathode metallisation
Die bond
Wire bond
Reject Ink Dot Size
Recommended Storage Environment
Edited by INFINEON Technologies AI PS DD HV3, L 4182P, Edition 1, 8.01.2002
1200V EMCON technology 130 µm chip
soft, fast switching
low reverse recovery charge
small temperature coefficient
V
1200V
R
I
F
35A
Die Size
Preliminary
5.5 x 5.5 mm
This chip is used for:
Applications:
EUPEC power modules and
discrete devices
SMPS, resonant applications,
drives
suitable for epoxy and soft solder die bonding
< 6 month at an ambient temperature of 23°C
store in original container, in dry nitrogen,
electrically conductive glue or solder
2
30.25 / 23.33
1400 nm Ni Ag –system
4.78 x 4.78
5.5 x 5.5
Package
0.65mm ; max 1.2mm
SIDC30D120E6
sawn on foil
3200 nm AlSiCu
130
150
180
Al, 500µm
Photoimide
482 pcs
Ordering Code
Q67050-A4125-
A001
A
C
mm
mm
deg
µm
2

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SIDC30D120E6 Summary of contents

Page 1

... Die Size F 2 35A 5.5 x 5.5 mm suitable for epoxy and soft solder die bonding electrically conductive glue or solder store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C SIDC30D120E6 A C Package Ordering Code Q67050-A4125- sawn on foil A001 5.5 x 5.5 30 ...

Page 2

... V =600V R I =35A ° di/dt=910A ° =35A di/dt=910A =35A / di/dt=910A =35A di/dt=910A SIDC30D120E6 Value Unit 1200 tbd 70 -55...+150 C Value Unit min. Typ. max. 27 µA 1200 V 1.9 V Value Unit min. Typ. max. tbd ns 36.8 A 46.3 3.55 µ C 7.63 tbd tbd 1 ...

Page 3

... CHIP DRAWING: Edited by INFINEON Technologies HV3, L 4182P, Edition 1, 8.01.2002 Preliminary SIDC30D120E6 ...

Page 4

... Life support devices or systems are intended to be implanted in the human body support and / or maintain and sustain and / or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Edited by INFINEON Technologies HV3, L 4182P, Edition 1, 8.01.2002 Preliminary SIDC30D120E6 INFINEON TECHNOLOGIES / EUPEC tbd ...

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