STGW19NC60H STMicroelectronics, STGW19NC60H Datasheet - Page 4

• Manufacturer Part Number: STGW19NC60H
• Description: IGBT 600V 42A 140W TO-247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGW19NC60H

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 12A
• Current - Collector (ic) (max): 42A
• Power - Max: 140W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: 497-10574-5

Electrical characteristics
2
4/15
Electrical characteristics
(T
Table 4.
1.
Table 5.
V
Symbol
Symbol
V
V
J
BR(CES)
g
CE(sat)
I
I
=25 °C unless otherwise specified)
C
GE(th)
C
C
Q
Q
CES
GES
fs
Pulsed: Pulse duration = 300 ìs, duty cycle 1.5%
Q
oes
ies
res
ge
gc
(1)
g
Collector-emitter
breakdown voltage
(V
Collector-emitter saturation
voltage
Gate threshold voltage
Collector cut-off current
(V
Gate-emitter leakage
current (V
Forward transconductance V
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Static
Dynamic
GE
GE
= 0)
= 0)
Parameter
Parameter
CE
= 0)
Doc ID 14398 Rev 4
V
V
V
V
Figure 18
I
V
V
V
V
V
V
C
GE
GE
CE
CE
GE
GE
CE
CE
CE
GE
CE
= 1 mA
STGB19NC60H, STGP19NC60H, STGW19NC60H
= V
= 600 V
= 600 V,T
= 15 V, I
= 15 V, I
= ±20 V
= 25 V, f = 1 MHz,
= 0
= 390 V, I
= 15 V,
= 15 V
Test conditions
GE
Test conditions
, I
,
C
I
C
C
C
= 250 µA
= 12 A
=12 A,T
J
C
= 12 A
= 125 °C
= 5 A,
J
=125 °C
Min. Typ. Max.
Min.
3.75
600
-
-
1180
Typ. Max. Unit
130
36
53
10
23
1.8
1.6
5
±100
5.75
150
2.5
-
-
1
Unit
mA
nC
nC
nC
pF
pF
pF
µA
nA
V
V
V
V
S