HGTP12N60C3D Fairchild Semiconductor, HGTP12N60C3D Datasheet - Page 5

• Manufacturer Part Number: HGTP12N60C3D
• Description: IGBT SMPS N-CH 600V 24A TO-220AB
• Manufacturer: Fairchild Semiconductor

Specifications of HGTP12N60C3D

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 15A
• Current - Collector (ic) (max): 24A
• Power - Max: 104W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

Typical Performance Curves
©2001 Fairchild Semiconductor Corporation
FIGURE 11. TURN ON ENERGY LOSS vs COLLECTOR TO
FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
200
100
2500
2000
1500
1000
2.0
1.5
1.0
0.5
10
500
0
1
0
5
5
0
T
J
f
f
MAX1
P
V
MAX2
P
R
= 150
D
GE
C
JC
EMITTER CURRENT
EMITTER CURRENT
VOLTAGE
= ALLOWABLE DISSIPATION
= CONDUCTION DISSIPATION
I
I
CE
CE
V
= 10V
(DUTY FACTOR = 50%)
o
= 1.2
= 0.05/(t
CE
= (P
C, R
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
10
, COLLECTOR TO EMITTER VOLTAGE (V)
5
D
o
G
C/W
- P
= 25 , L = 100 H, V
D(OFF)I
C
)/(E
10
15
ON
10
V
+ t
GE
+ E
C
D(ON)I
C
RES
= 10V
IES
OFF
)
)
T
R
20
15
J
CE(PK)
G
V
= 150
FREQUENCY = 1MHz
GE
= 25 , L = 100 H
C
(Continued)
OES
= 15V
o
= 480V
C, T
V
20
GE
25
20
C
= 75
= 15V
o
C
30
30
25
FIGURE 12. TURN OFF ENERGY LOSS vs COLLECTOR TO
100
15
12
3.0
2.5
2.0
1.5
1.0
0.5
80
60
40
20
9
6
3
0
FIGURE 14. SWITCHING SAFE OPERATING AREA
0
0
0
5
0
I
T
G
T
FIGURE 16. GATE CHARGE WAVEFORMS
J
J
REF = 1.276mA, R
= 150
= 150
V
EMITTER CURRENT
I
CE(PK)
100
CE
10
LIMITED BY
CIRCUIT
o
o
, COLLECTOR TO EMITTER CURRENT (A)
C, R
10
C, V
V
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
G
CE
GE
= 25 , L = 100 H, V
200
Q
= 600V
= 200V
20
= 15V, R
g
, GATE CHARGE (nC)
L
15
= 50 , T
HGTP12N60C3D, HGT1S12N60C3DS Rev. B
300
G
30
= 25 , L = 100 H
V
C
CE
V
= 25
GE
20
400
= 400V
CE(PK)
o
= 10V or 15V
40
C
= 480V
500
25
50
600
30
60