IXGT32N90B2D1 IXYS, IXGT32N90B2D1 Datasheet
IXGT32N90B2D1
Specifications of IXGT32N90B2D1
Related parts for IXGT32N90B2D1
IXGT32N90B2D1 Summary of contents
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... V GE(th CES CE CES ± GES CE(sat) C110 C GE © 2005 IXYS All rights reserved Advance Technical Information IXGH 32N90B2D1 IXGT 32N90B2D1 Maximum Ratings 900 = 1 MW 900 GE ±20 ± 200 = 10 Ω < 600V CL 300 -55 ... +150 150 -55 ... +150 300 1.13/10Nm/lb.in. TO-247 TO-268 Characteristic Values (T = 25° ...
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... A/μ 100 thJC R thCS IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25°C unless otherwise specified) J Min. Typ. Max 1790 ...
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... Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage 6 5 64A C 32A 5 16A 4.5 4 3.5 3 2 Volts G E © 2005 IXYS All rights reserved Fig. 2. Extended Output Characteristics 240 200 9V 160 120 3.5 4 4.5 0 1.5 1.4 1.3 9V 1.2 1.1 7V 1.0 0.9 0 ...
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... C J º º Amperes C Fig. 9. Capacitance 10000 MHz 1000 100 Volts 0.1 0.01 0.1 IXYS reserves the right to change limits, test conditions, and dimensions 100 ies oes res Fig. 11. Maxim um Transient Therm al Resistance 1 10 Pulse Width - milliseconds IXGH 32N90B2D1 IXGT 32N90B2D1 Fig ...
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... R - Ohms G Fig. 14. Dependence of Turn-off Energy Loss on Collector Current 16 = 5Ω 15V 125 720V Amperes C Fig. 16. Dependence of Turn-off Energy Loss on Tem perature 16 = 5Ω 15V 720V Degrees Centigrade J © 2005 IXYS All rights reserved 64A 32A 16A º º 64A 32A 16A ...
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... I = 64A, 32A, 16A C 300 250 200 t d(off) = 5Ω 150 720V CE 100 Degrees Centigrade J IXYS reserves the right to change limits, test conditions, and dimensions. Sw itching Tim e on Gate Resistance 400 390 = 15V 40 GE 380 35 370 360 30 350 25 340 20 330 320 ...
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... Fig. 27. Dynamic parameters versus K/W Z thJC 0.1 0.01 0.001 0.00001 0.0001 0.001 Fig. 30. Transient thermal resistance junction to case © 2005 IXYS All rights reserved Ultrafast Diode Charateristic Curves 100°C VJ μ 600V 60A 30A 15A 100 A/μs 1000 ...