IXGT25N160 IXYS, IXGT25N160 Datasheet - Page 5

• Manufacturer Part Number: IXGT25N160
• Description: IGBT 1600V 75A TO-268
• Manufacturer: IXYS

Specifications of IXGT25N160

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1600V
• Vce(on) (max) @ Vge, Ic: 4.7V @ 20V, 100A
• Current - Collector (ic) (max): 75A
• Power - Max: 300W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Vces, (v): 1600
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): 35
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.5
• Tfi, Typ, Igbt, (ns): -
• Eoff, Typ, Tj=125°c, Igbt, (mj): 20
• Rthjc, Max, Igbt, (°c/w): 0.42
• If, Tc=90°c, Diode, (a): -
• Rthjc, Max, Diode, (k/w): -
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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1.00
0.10
0.01
1000
110
100
900
800
700
600
500
400
300
200
90
80
70
60
50
40
30
20
10
0.0001
0
Fig. 13. Resistive Turn-Off Switching Times
200
10
t
T
V
Fig. 15. Reverse-Bias Safe Operating Area
T
R
dV / dT < 10V / ns
f
J
CE
J
G
= 125ºC, V
15
= 125ºC
= 20 Ω
400
= 1200V
20
vs. Gate Resistance
t
d(off)
GE
600
- - - -
= 15V
R
25
G
I
C
V
- Ohms
= 50A
800
CE
0.001
30
- Volts
I
C
35
1000
= 150A, 100A
40
1200
Fig. 17. Maximum Transient Thermal Resistance
45
1400
50
0.01
450
400
350
300
250
200
150
100
50
Pulse Width - Seconds
1600
10,000
1,000
100
16
14
12
10
10
8
6
4
2
0
0
0
0.1
V
I
I
C
G
f = 1 MHz
CE
10
= 50A
= 10 mA
5
= 800V
20
10
Fig. 14. Gate Charge
Fig. 16. Capacitance
30
Q
G
15
- NanoCoulombs
V
CE
40
- Volts
20
1
50
IXGH 25N160
IXGT 25N160
C ies
C oes
C res
25
60
30
70
35
80
10
40
90