STGY50NC60WD STMicroelectronics, STGY50NC60WD Datasheet - Page 5

• Manufacturer Part Number: STGY50NC60WD
• Description: IGBT N-CH 110A 600V MAX247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGY50NC60WD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.6V @ 15V, 40A
• Current - Collector (ic) (max): 110A
• Power - Max: 278W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: MAX247™
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 110 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 110A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Pd: 260W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-7489-5; STGY50NC60WD

STGY50NC60WD
Table 5.
Table 6.
1. Eon is the tun-on losses when a typical diode is used in the test circuit in
2. Turn-off losses include also the tail of the collector current
Symbol
(di/dt)
(di/dt)
Symbol
t
t
t
t
E
E
E
E
t
t
d(Voff)
d(Voff)
r(Voff)
r(Voff)
a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25°C and 125°C)
d(on)
d(on)
E
E
on
off
on
off
t
t
t
t
r
r
f
f
ts
ts
(1)
(2)
(1)
(2)
on
on
Turn-on delay time
Current rise time
Turn-on current slope
Turn-on delay time
Current rise time
Turn-on current slope
Off voltage rise time
Turn-off delay time
Current fall time
Off voltage rise time
Turn-off delay time
Current fall time
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on switching losses
Turn-off switching losses
Total switching losses
Switching on/off (inductive load)
Switching energy (inductive load)
Parameter
Parameter
V
R
Figure 15
V
R
T
Figure 15
V
R
Figure
V
R
T
Figure
V
R
Figure
V
R
T
Figure
C
CC
CC
C
C
G
G
CC
CC
CC
CC
G
G
G
G
= 10 Ω, V
= 10 Ω, V
= 10 Ω, V
= 10 Ω, V
= 10 Ω, V
= 10 Ω, V
= 125 °C
= 125 °C
= 125 °C
= 390 V, I
= 390 V, I
= 390 V, I
= 390 V, I
= 390 V, I
= 390 V, I
Test conditions
Test conditions
17,
17,
17,
17,
Figure 15
Figure 15
Figure 15
Figure 15
GE
GE
GE
GE
GE
GE
C
C
C
C
C
C
= 15 V,
= 15 V,
= 15 V,
= 15 V,
= 15 V,
= 15 V,
= 40 A
= 40 A
= 40 A
= 40 A
= 40 A
= 40 A
Figure 18
Electrical characteristics
Min.
Min.
If the IGBT is offered in
2400
2020
Typ.
1545
Typ.
240
280
365
560
925
635
910
52
17
50
19
31
35
59
63
Max.
Max.
1260
470
790
A/µs
A/µs
Unit
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µJ
µJ
µJ
µJ
µJ
µJ
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