PMBFJ108,215 NXP Semiconductors, PMBFJ108,215 Datasheet

JFET N-CHAN 25V SOT-23

PMBFJ108,215

Manufacturer Part Number
PMBFJ108,215
Description
JFET N-CHAN 25V SOT-23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PMBFJ108,215

Package / Case
TO-236-3, SC-59, SOT-23-3
Current - Drain (idss) @ Vds (vgs=0)
80mA @ 15V
Drain To Source Voltage (vdss)
25V
Fet Type
N-Channel
Voltage - Breakdown (v(br)gss)
25V
Voltage - Cutoff (vgs Off) @ Id
10V @ 1µA
Input Capacitance (ciss) @ Vds
30pF @ 10V (VGS)
Resistance - Rds(on)
8 Ohm
Mounting Type
Surface Mount
Power - Max
250mW
Configuration
Single
Transistor Polarity
N-Channel
Drain Source Voltage Vds
25 V
Gate-source Breakdown Voltage
- 25 V
Maximum Operating Temperature
+ 150 C
Maximum Drain Gate Voltage
- 25 V
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-2078-2
934003880215
PMBFJ108 T/R
1. Product profile
2. Pinning information
1.1 General description
1.2 Features
1.3 Applications
Symmetrical N-channel junction FETs in a SOT23 package.
Table 1:
[1]
Pin
1
2
3
PMBFJ108; PMBFJ109;
PMBFJ110
N-channel junction FETs
Rev. 03 — 4 August 2004
High-speed switching
Interchangeability of drain and source connections
Low R
Analog switches
Choppers and commutators
Audio amplifiers.
Drain and source are interchangeable.
DSon
Pinning
Description
drain
source
gate
at zero gate voltage ( 8
[1]
for PMBFJ108).
Simplified outline
1
Product data sheet
3
SOT23
2
Symbol
3
sym053
1
2

Related parts for PMBFJ108,215

PMBFJ108,215 Summary of contents

Page 1

PMBFJ108; PMBFJ109; PMBFJ110 N-channel junction FETs Rev. 03 — 4 August 2004 1. Product profile 1.1 General description Symmetrical N-channel junction FETs in a SOT23 package. 1.2 Features High-speed switching Interchangeability of drain and source connections Low R 1.3 Applications ...

Page 2

Philips Semiconductors 3. Ordering information Table 2: Type number PMBFJ108 PMBFJ109 PMBFJ110 4. Marking Table 3: Type number PMBFJ108 PMBFJ109 PMBFJ110 [ Made in Hong Kong * = t: Made in Malaysia * = W: Made in ...

Page 3

Philips Semiconductors 7. Static characteristics Table 6: Static characteristics Symbol Parameter I gate-source leakage current GSS I drain-source cut-off current DSX I drain-source leakage current DSS PMBFJ108 PMBFJ109 PMBFJ110 V gate-source breakdown voltage (BR)GSS V ...

Page 4

Philips Semiconductors Fig 1. Switching circuit. Fig 2. Input and output waveforms. 9397 750 13401 Product data sheet PMBFJ108; PMBFJ109; PMBFJ110 10 90 ...

Page 5

Philips Semiconductors 9. Package outline Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 Fig ...

Page 6

Philips Semiconductors 10. Revision history Table 8: Revision history Document ID Release date Data sheet status PMBFJ108_109_110_ 20040804 3 • Modifications: The format of this data sheet has been redesigned to comply with the new presentation and information standard of ...

Page 7

Philips Semiconductors 11. Data sheet status [1] Level Data sheet status Product status I Objective data Development II Preliminary data Qualification III Product data Production [1] Please consult the most recently issued data sheet before initiating or completing a design. ...

Page 8

Philips Semiconductors 15. Contents 1 Product profi 1.1 General description ...

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