PMBFJ113,215 NXP Semiconductors, PMBFJ113,215 Datasheet - Page 6

• Manufacturer Part Number: PMBFJ113,215
• Description: MOSFET N-CH 40V 2MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of PMBFJ113,215

• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Package / Case: SOT-23
• Resistance Drain-source Rds (on): 100 Ohms
• Drain Source Voltage Vds: 40 V
• Gate-source Cutoff Voltage: - 0.5 V
• Gate-source Breakdown Voltage: - 40 V
• Drain Current (idss At Vgs=0): 2 mA
• Power Dissipation: 300 mW
• Channel Type: N
• Configuration: Single
• Gate-source Voltage (max): -40V
• Drain-gate Voltage (max): -40V
• Drain-source Volt (max): 40V
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 933929750215::PMBFJ113 T/R::PMBFJ113 T/R

Philips Semiconductors
10. Revision history
Table 8:
9397 750 13402
Product data sheet
Document ID
PMBFJ111_112_113_
3
Modifications:
PMBFJ111_112_113_
CNV_2
Revision history
Release date Data sheet status
20040804
19971201
•
•
The format of this data sheet has been redesigned to comply with the new presentation and
information standard of Philips Semiconductors.
Table 3
“Marking”: added new marking codes
Product data sheet
Product specification -
PMBFJ111; PMBFJ112; PMBFJ113
Rev. 03 — 4 August 2004
Change notice Order number
-
9397 750 13402
not applicable
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
N-channel junction FETs
Supersedes
PMBFJ111_112_113_
CNV_2
-
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