PMBFJ113,215 NXP Semiconductors, PMBFJ113,215 Datasheet - Page 6
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PMBFJ113,215
Manufacturer Part Number
PMBFJ113,215
Description
MOSFET N-CH 40V 2MA SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.PMBFJ113215.pdf
(8 pages)
Specifications of PMBFJ113,215
Mounting Style
SMD/SMT
Transistor Polarity
N-Channel
Package / Case
SOT-23
Resistance Drain-source Rds (on)
100 Ohms
Drain Source Voltage Vds
40 V
Gate-source Cutoff Voltage
- 0.5 V
Gate-source Breakdown Voltage
- 40 V
Drain Current (idss At Vgs=0)
2 mA
Power Dissipation
300 mW
Channel Type
N
Configuration
Single
Gate-source Voltage (max)
-40V
Drain-gate Voltage (max)
-40V
Drain-source Volt (max)
40V
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
933929750215::PMBFJ113 T/R::PMBFJ113 T/R
Philips Semiconductors
10. Revision history
Table 8:
9397 750 13402
Product data sheet
Document ID
PMBFJ111_112_113_
3
Modifications:
PMBFJ111_112_113_
CNV_2
Revision history
Release date Data sheet status
20040804
19971201
•
•
The format of this data sheet has been redesigned to comply with the new presentation and
information standard of Philips Semiconductors.
Table 3
“Marking”: added new marking codes
Product data sheet
Product specification -
PMBFJ111; PMBFJ112; PMBFJ113
Rev. 03 — 4 August 2004
Change notice Order number
-
9397 750 13402
not applicable
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
N-channel junction FETs
Supersedes
PMBFJ111_112_113_
CNV_2
-
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