FJX597JCTF Fairchild Semiconductor, FJX597JCTF Datasheet
首页 Discrete Semiconductor Products JFETs (Junction Field Effect) FJX597JCTF
Manufacturer Part Number
FJX597JCTF
Description
IC FET N-CH SI 20V 100MW SOT-323
Manufacturer
Fairchild Semiconductor
Specifications of FJX597JCTF
Current - Drain (idss) @ Vds (vgs=0)
210µA @ 5V
Current Drain (id) - Max
1mA
Fet Type
N-Channel
Voltage - Breakdown (v(br)gss)
20V
Voltage - Cutoff (vgs Off) @ Id
600mV @ 1µA
Input Capacitance (ciss) @ Vds
3.5pF @ 5V
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Power - Max
100mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2004 Fairchild Semiconductor Corporation
Capacitor Microphone Applications
• Especially Suited for use in Audio, Telephone Capacitor Microphones
• Excellent Voltage Characteristic
• Excellent Transient Characteristic
Si N-channel Junction FET
Absolute Maximum Ratings
Electrical Characteristics
V
I
I
P
T
T
BV
V
I
lY
C
C
G
D
DSS
Symbol
J
STG
GDO
D
GS
ISS
RSS
FS
GDO
Symbol
(off)
l
Gate-Drain Breakdown Voltage
Gate-Source Cut-off Voltage
Drain Current
Forward Transfer Admittance
Input Capacitance
Output Capacitance
Gate-Drain Voltage
Gate Current
Drain Current
Power Dissipation
Junction Temperature
Storage Temperature
Parameter
T
a
=25 C unless otherwise noted
T
Parameter
a
=25 C unless otherwise noted
FJX597JB
V
V
V
V
V
I
G
DS
DS
DS
DS
DS
= -100uA
=5V, I
=5V, V
=5V, V
=5V, V
=5V, V
Test Condition
D
GS
GS
GS
GS
=1 A
=0, f=1MHz
=0
=0, f=1MHz
=0, f=1MHz
Min.
150
-20
0.4
1. Drain 2. Source 3. Gate
-55 ~ 150
Ratings
3
100
150
-20
10
1
Typ.
0.65
-0.6
1.2
3.5
1
Marking: SCB
Max.
-1.5
240
SOT-323
Rev. A, October 2004
2
Units
mW
mA
mA
V
C
C
Units
mS
pF
pF
V
V
A
Related parts for FJX597JCTF
FJX597JCTF Summary of contents
... Gate-Drain Breakdown Voltage GDO V (off) Gate-Source Cut-off Voltage GS I Drain Current DSS lY l Forward Transfer Admittance FS C Input Capacitance ISS C Output Capacitance RSS ©2004 Fairchild Semiconductor Corporation FJX597JB T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition I = -100uA G V =5V ...
... V [V], GATE-SOURCE VOLTAGE GS Figure 0.1 0.1 I [mA], DRAIN CURRENT DSS Figure 5. V (off)-I GS ©2004 Fairchild Semiconductor Corporation 1000 I = 200 A DSS 900 800 700 600 500 400 300 200 100 = -0. -0. ...
... Typical Characteristics [V], DRAIN-SOURCE VOLTAGE DS Figure RSS ©2004 Fairchild Semiconductor Corporation (Continued) 140 120 f = 1MHz 100 100 125 150 C], AMBIENT TEMPERATURE a Figure Rev. A, October 2004 ...
... Package Dimensions 2.00±0.20 1.25±0.10 1.00±0.10 ©2004 Fairchild Semiconductor Corporation SOT-323 2.10±0.10 0.95±0.15 ±0.10 +0.05 0.05 –0.02 0.275±0.100 3° +0.04 0.135 –0.01 0.10 Min 3° 0.90 1.30±0.10 Dimensions in Millimeters Rev. A, October 2004 ...
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® A CEx™ FAST FASTr™ ActiveArray™ FPS™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ ...
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