FDG6304P Fairchild Semiconductor, FDG6304P Datasheet - Page 2

• Manufacturer Part Number: FDG6304P
• Description: IC FET DGTL P-CHAN DUAL SC70-6
• Manufacturer: Fairchild Semiconductor
• Type: Small Signalr

Specifications of FDG6304P

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.1 Ohm @ 410mA, 4.5V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 410mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 1.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 62pF @ 10V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Number Of Elements: 2
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 1.1Ohm
• Drain-source On-volt: 25V
• Gate-source Voltage (max): 8V
• Drain Current (max): 410mA
• Power Dissipation: 300mW
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SC-70
• Module Configuration: Dual
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -410mA
• Drain Source Voltage Vds: -25V
• On Resistance Rds(on): 1.1ohm
• Rds(on) Test Voltage Vgs: -4.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDG6304PTR

Electrical Characteristics
Symbol
OFF CHARACTERISTICS
BV
I
I
ON CHARACTERISTICS
V
R
I
g
DYNAMIC CHARACTERISTICS
C
C
C
SWITCHING CHARACTERISTICS
t
t
t
t
Q
Q
Q
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
V
Notes:
1. R
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
DSS
GSS
D(ON)
D(on)
r
D(off)
f
S
FS
BV
GS(th)
V
DS(ON)
iss
oss
rss
SD
g
gs
gd
DSS
GS(th)
by design while R
DSS
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
/ T
/ T
J
J
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
Gate - Body Leakage Current
Gate Threshold Voltage
Gate Threshold Voltage Temp.Coefficient
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Source Current
Drain-Source Diode Forward Voltage
CA
is determined by the user's board design. R
(Note 2)
(Note 2)
(T
A
JA
= 25
= 415
O
C/W on minimum pad mounting on FR-4 board in still air.
O
C unless otherwise noted)
Conditions
V
I
V
V
V
I
V
V
V
V
V
V
V
V
V
V
D
D
f = 1.0 MHz
GS
DS
GS
DS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
= -250 µA, Referenced to 25
= -250 µA, Referenced to 25
= -20 V, V
= V
= -5 V, I
= 10 V, V
= -5 V, I
= 0 V, I
= -8 V, V
= -4.5 V, I
= -2.7 V, I
= -4.5 V, V
= -5 V, I
= -4.5 V, R
= -4.5 V
= 0 V, I
GS
, I
D
D
S
D
D
D
= -0.25 A
= -250 µA
= -250 µA
DS
= -0.41 A
GS
= -0.41 A,
D
D
GS
= -0.5 A,
DS
GEN
= 0 V
= -0.41 A
= -0.25 A
= 0 V,
= 0 V
= -5 V
= 6
(Note 2)
T
T
J
J
= 55°C
=125°C
o
o
C
C
-0.65
Min
-1.5
-25
-0.82
-0.85
0.85
1.15
0.31
0.29
Typ
-22
1.2
0.9
1.1
62
34
10
55
35
2
7
8
-0.25
Max
-100
-1.5
-1.2
-10
1.1
1.9
1.5
1.5
15
16
80
60
-1
JC
FDG6304P Rev.E1
is guaranteed
mV /
mV /
Units
µA
µA
nA
nC
nC
nC
ns
ns
ns
ns
V
V
A
S
pF
pF
pF
A
V
o
o
C
C