FDG6304P Fairchild Semiconductor, FDG6304P Datasheet - Page 2
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FDG6304P
Manufacturer Part Number
FDG6304P
Description
IC FET DGTL P-CHAN DUAL SC70-6
Manufacturer
Fairchild Semiconductor
Type
Small Signalr
Specifications of FDG6304P
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.1 Ohm @ 410mA, 4.5V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
410mA
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
1.5nC @ 4.5V
Input Capacitance (ciss) @ Vds
62pF @ 10V
Power - Max
300mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Number Of Elements
2
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
1.1Ohm
Drain-source On-volt
25V
Gate-source Voltage (max)
8V
Drain Current (max)
410mA
Power Dissipation
300mW
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
6
Package Type
SC-70
Module Configuration
Dual
Transistor Polarity
P Channel
Continuous Drain Current Id
-410mA
Drain Source Voltage Vds
-25V
On Resistance Rds(on)
1.1ohm
Rds(on) Test Voltage Vgs
-4.5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDG6304PTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDG6304P
Manufacturer:
FAIRCHILD
Quantity:
5 321
Company:
Part Number:
FDG6304P
Manufacturer:
Fairchild Semiconductor
Quantity:
42 646
Company:
Part Number:
FDG6304P
Manufacturer:
FAIRCHILD
Quantity:
3 174
Part Number:
FDG6304P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Electrical Characteristics
Symbol
OFF CHARACTERISTICS
BV
I
I
ON CHARACTERISTICS
V
R
I
g
DYNAMIC CHARACTERISTICS
C
C
C
SWITCHING CHARACTERISTICS
t
t
t
t
Q
Q
Q
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
V
Notes:
1. R
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
DSS
GSS
D(ON)
D(on)
r
D(off)
f
S
FS
BV
GS(th)
V
DS(ON)
iss
oss
rss
SD
g
gs
gd
DSS
GS(th)
by design while R
DSS
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
/ T
/ T
J
J
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
Gate - Body Leakage Current
Gate Threshold Voltage
Gate Threshold Voltage Temp.Coefficient
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Source Current
Drain-Source Diode Forward Voltage
CA
is determined by the user's board design. R
(Note 2)
(Note 2)
(T
A
JA
= 25
= 415
O
C/W on minimum pad mounting on FR-4 board in still air.
O
C unless otherwise noted)
Conditions
V
I
V
V
V
I
V
V
V
V
V
V
V
V
V
V
D
D
f = 1.0 MHz
GS
DS
GS
DS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
= -250 µA, Referenced to 25
= -250 µA, Referenced to 25
= -20 V, V
= V
= -5 V, I
= 10 V, V
= -5 V, I
= 0 V, I
= -8 V, V
= -4.5 V, I
= -2.7 V, I
= -4.5 V, V
= -5 V, I
= -4.5 V, R
= -4.5 V
= 0 V, I
GS
, I
D
D
S
D
D
D
= -0.25 A
= -250 µA
= -250 µA
DS
= -0.41 A
GS
= -0.41 A,
D
D
GS
= -0.5 A,
DS
GEN
= 0 V
= -0.41 A
= -0.25 A
= 0 V,
= 0 V
= -5 V
= 6
(Note 2)
T
T
J
J
= 55°C
=125°C
o
o
C
C
-0.65
Min
-1.5
-25
-0.82
-0.85
0.85
1.15
0.31
0.29
Typ
-22
1.2
0.9
1.1
62
34
10
55
35
2
7
8
-0.25
Max
-100
-1.5
-1.2
-10
1.1
1.9
1.5
1.5
15
16
80
60
-1
JC
FDG6304P Rev.E1
is guaranteed
mV /
mV /
Units
µA
µA
nA
nC
nC
nC
ns
ns
ns
ns
V
V
A
S
pF
pF
pF
A
V
o
o
C
C