FDG6304P Fairchild Semiconductor, FDG6304P Datasheet - Page 3
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FDG6304P
Manufacturer Part Number
FDG6304P
Description
IC FET DGTL P-CHAN DUAL SC70-6
Manufacturer
Fairchild Semiconductor
Type
Small Signalr
Specifications of FDG6304P
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.1 Ohm @ 410mA, 4.5V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
410mA
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
1.5nC @ 4.5V
Input Capacitance (ciss) @ Vds
62pF @ 10V
Power - Max
300mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Number Of Elements
2
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
1.1Ohm
Drain-source On-volt
25V
Gate-source Voltage (max)
8V
Drain Current (max)
410mA
Power Dissipation
300mW
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
6
Package Type
SC-70
Module Configuration
Dual
Transistor Polarity
P Channel
Continuous Drain Current Id
-410mA
Drain Source Voltage Vds
-25V
On Resistance Rds(on)
1.1ohm
Rds(on) Test Voltage Vgs
-4.5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDG6304PTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDG6304P
Manufacturer:
FAIRCHILD
Quantity:
5 321
Company:
Part Number:
FDG6304P
Manufacturer:
Fairchild Semiconductor
Quantity:
42 646
Company:
Part Number:
FDG6304P
Manufacturer:
FAIRCHILD
Quantity:
3 174
Part Number:
FDG6304P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
A) TD - Tc (25°C) Tj ET 1203 297.6 l S 1203 29762.08 m 104074.2897.6 l S 4074.289762.08 m 1043.0.297.6 l S 3.0.29762.08 m 10471 97.6 l S 71 9762.08 m 105032.9297.6 l S 032.929762.08 m 108.88 20
Typical Electrical Characteristics
1.2
0.9
0.6
0.3
0.8
0.6
0.4
0.2
1
0
0
0.5
Figure 3. On-Resistance Variation
Figure 5. Transfer Characteristics.
0
Figure 1. On-Region Characteristics.
V
DS
= -5V
V
GS
=-4.5V
1
-V
-V
GS
with Temperature.
1
DS
, GATE TO SOURCE VOLTAGE (V)
, DRAIN-SOURCE VOLTAGE (V)
-3.0V
1.5
-2.7V
2
T = -55°C
-2.5V
J
2
-2.0V
25°C
3
2.5
125°C
-1.5V
4
3
5
4
3
2
1
0
1
2.5
1.5
0.5
2
1
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
0
0.2
25°CV76 m
V
GS
0.2
-V
= -2.0V
2
GS
0.4
2l
Gate-to-Source Voltage.
Drain Current and Gate Voltage.
, GATE TO SOURCE VOLTAGE (V)
S
-I
0.4
D
359.52 26.76 m
, DRAIN CURRENT (A)
-2.5V
0.6
3
0.6
-2.7V
0.8
-3.0V
518.88 21214.9 S
0.8
4
-3.5V
T = 125 ° C
I = -0.2A
J
1
D
1
-4.5V
FDG6304P Rev.E1
25° C
359.52 2214.92 l
1.2
1.2
5
518.88 2192 l
[] 0 d 359.521974
S