FDC6312P Fairchild Semiconductor, FDC6312P Datasheet - Page 8
![MOSFET P-CH DUAL 20V SSOT-6](/photos/5/42/54216/261-supersot-6_sml.jpg)
FDC6312P
Manufacturer Part Number
FDC6312P
Description
MOSFET P-CH DUAL 20V SSOT-6
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDC6312P.pdf
(5 pages)
Specifications of FDC6312P
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
115 mOhm @ 2.3A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.3A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
7nC @ 4.5V
Input Capacitance (ciss) @ Vds
467pF @ 10V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
6-SSOT, SuperSOT-6
Configuration
Dual
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.115 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
5.3 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
2.3 A
Power Dissipation
960 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDC6312P
FDC6312PTR
FDC6312PTR
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Company
Part Number
Manufacturer
Quantity
Price
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