FDC6312P Fairchild Semiconductor, FDC6312P Datasheet - Page 4
![MOSFET P-CH DUAL 20V SSOT-6](/photos/5/42/54216/261-supersot-6_sml.jpg)
FDC6312P
Manufacturer Part Number
FDC6312P
Description
MOSFET P-CH DUAL 20V SSOT-6
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDC6312P.pdf
(5 pages)
Specifications of FDC6312P
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
115 mOhm @ 2.3A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.3A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
7nC @ 4.5V
Input Capacitance (ciss) @ Vds
467pF @ 10V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
6-SSOT, SuperSOT-6
Configuration
Dual
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.115 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
5.3 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
2.3 A
Power Dissipation
960 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDC6312P
FDC6312PTR
FDC6312PTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDC6312P
Manufacturer:
MICROCHIP
Quantity:
1 000
Company:
Part Number:
FDC6312P
Manufacturer:
Fairchild Semiconductor
Quantity:
89 663
Part Number:
FDC6312P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDC6312P-NL
Manufacturer:
AD
Quantity:
3 089
Part Number:
FDC6312P-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Typical Characteristics
5
4
3
2
1
0
0.01
100
0.1
10
Figure 9. Maximum Safe Operating Area.
0
1
Figure 7. Gate Charge Characteristics.
0.1
0.001
I
D
0.01
R
= -2.3A
0.1
SINGLE PULSE
R
DS(ON)
0.0001
1
V
JA
T
GS
A
= 180
1
= 25
LIMIT
= -4.5V
o
D = 0.5
o
C/W
C
-V
0.2
0.1
DS
0.05
SINGLE PULSE
, DRAIN-SOURCE VOLTAGE (V)
0.02
2
Q
0.01
1
g
, GATE CHARGE (nC)
DC
0.001
10s
3
Figure 11. Transient Thermal Response Curve.
1s
100ms
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
10
10ms
4
V
DS
0.01
= -5V
1ms
5
-15V
-10V
100
6
0.1
t
1
, TIME (sec)
700
600
500
400
300
200
100
5
4
3
2
1
0
0.01
0
Figure 8. Capacitance Characteristics.
0
Figure 10. Single Pulse Maximum
1
0.1
-V
Power Dissipation.
5
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
C
ISS
OSS
RSS
1
t
1
10
, TIME (sec)
10
10
P(pk)
Duty Cycle, D = t
T
SINGLE PULSE
R
R
J
R
JA
T
JA
- T
100
A
JA
= 180°C/W
(t) = r(t) + R
15
= 25°C
A
t
100
= 180°C/W
1
= P * R
t
2
FDC6312P Rev C (W)
V
f = 1MHz
GS
= 0 V
JA
1
(t)
JA
/ t
1000
2
20
1000