FDS4559 Fairchild Semiconductor, FDS4559 Datasheet
FDS4559
Specifications of FDS4559
FDS4559TR
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FDS4559 Summary of contents
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... Reel Size 13” April 2002 10V DS(on 4.5V DS(on 105 –10V DS(on 135 –4.5V DS(on Units 60 – 4.5 –3 – 1.6 1.2 1 -55 to +175 C 78 C/W 40 C/W Tape width Quantity 12mm 2500 units FDS4559 Rev C1(W) ...
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... MHz 10V GEN – – – GEN 4 – –3 –10V Typ Max Units 4 – mV – –1 Q1 +100 nA Q2 +100 –1 –1.6 –3 Q1 –5.5 mV 105 130 190 105 135 – 650 pF Q2 759 12 2 2 3.0 FDS4559 Rev C1(W) ...
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... A Test Conditions 1.3 A (Note –1.3 A (Note determined by the user's board design 125°C/W when 2 mounted on a .02 in pad copper Type Min Typ Max Units Q1 1 –1.3 Q1 0.8 1 –0.8 –1.2 c) 135°C/W when mounted on a minimum pad. FDS4559 Rev C1(W) ...
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... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = -3.5V GS -4.0V -4.5V -5.0V -6.0V -7.0V -8.0V -10V DRAIN CURRENT ( -1. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS4559 Rev C1( 1.4 ...
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... C RSS Figure 8. Capacitance Characteristics. 40 100 s 30 10ms 0.01 100 Figure 10. Single Pulse Maximum MHz ISS C OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 135°C 25° 100 t , TIME (sec) 1 Power Dissipation. FDS4559 Rev C1(W) 60 1000 ...
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... Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. = 4.0V 4.5V 5.0V 6.0V 8.0V 10V DRAIN CURRENT ( 2. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS4559 Rev C1(W) 10 1.2 ...
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... Figure 20. Single Pulse Maximum 0.01 0 TIME (sec 1MHz ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE 135 C 0 100 SINGLE PULSE TIME (SEC) Power Dissipation. R ( 135°C/W JA P(pk ( Duty Cycle 100 FDS4559 Rev C1(W) 60 1000 / t 2 1000 ...
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