FDS4559 Fairchild Semiconductor, FDS4559 Datasheet - Page 6

• Manufacturer Part Number: FDS4559
• Description: MOSFET N/P-CH 60V 4.5/3.5A SO-8
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS4559

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 55 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 4.5A, 3.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 650pF @ 25V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.055 Ohm @ 10 V @ N Channel
• Forward Transconductance Gfs (max / Min): 14 S, 9 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.5 A @ N Channel or 3.5 A @ P Channel
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS4559; FDS4559TR

Typical Characteristics: Q1
20
16
12
20
16
12
8
4
0
8
4
0
Figure 13. On-Resistance Variation with
0
1
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
Figure 11. On-Region Characteristics.
2
1
V
Figure 15. Transfer Characteristics.
-50
DS
V
5.0V
GS
= 5V
6.0V
V
= 10V
I
D
GS
-25
= 4.5A
= 10V
2
V
1
V
GS
0
DS
T
, GATE TO SOURCE VOLTAGE (V)
4.5V
J
, DRAIN-SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
Temperature.
25
3
4.0V
50
T
A
2
= -55
75
o
C
4
3.5V
100
125
o
25
C
o
3
C)
o
125
C
5
150
175
4
6
Figure 16. Body Diode Forward Voltage Variation
0.14
0.12
0.08
0.06
0.04
0.02
0.0001
0.1
0.001
0
Figure 12. On-Resistance Variation with
Figure 14. On-Resistance Variation with
0.01
100
1.8
1.6
1.4
1.2
0.8
with Source Current and Temperature.
0.1
2
10
1
1
0
0
V
Drain Current and Gate Voltage.
GS
V
GS
= 0V
= 4.0V
Gate-to-Source Voltage.
0.2
V
4
SD
V
4
GS
, BODY DIODE FORWARD VOLTAGE (V)
4.5V
, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
T
0.4
A
5.0V
= 125
8
o
C
6.0V
6
0.6
12
25
T
T
A
A
8.0V
o
= 125
= 25
C
0.8
o
C
o
C
10V
-55
16
8
o
C
FDS4559 Rev C1(W)
1
I
D
= 2.3A
20
1.2
10