SI4618DY-T1-E3 Vishay, SI4618DY-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SI4618DY-T1-E3
• Description: MOSFET N-CH DUAL 30V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4618DY-T1-E3

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 17 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.7A, 11.4A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 44nC @ 10V
• Input Capacitance (ciss) @ Vds: 1535pF @ 15V
• Power - Max: 1.38W, 2.35W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 7.4A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 14mohm
• Rds(on) Test Voltage Vgs: 16V
• Threshold Voltage Vgs Typ: 2.5V
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.017 Ohms, 0.01 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 6.7 A, 11.4 A
• Power Dissipation: 1.38 W, 2.35 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4618DY-T1-E3TR

Si4618DY
Vishay Siliconix
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
V
V
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
DS
GS(th)
Temperature Coefficient
Temperature Coefficient
a
b
b
J
= 25 °C, unless otherwise noted
b
ΔV
Symbol
ΔV
R
V
GS(th)
I
I
I
C
V
DS(on)
C
GS(th)
D(on)
C
Q
Q
GSS
DSS
DS
g
Q
R
DS
oss
rss
iss
fs
gs
gd
g
g
/T
/T
J
J
V
V
V
V
V
V
V
V
DS
DS
DS
DS
DS
DS
DS
DS
= 30 V, V
= 30 V, V
V
V
= 15 V, V
= 15 V, V
= 15 V, V
= 15 V, V
= 15 V, V
= 15 V, V
V
V
V
V
V
V
DS
DS
V
V
V
V
V
V
V
V
DS
DS
DS
DS
DS
DS
GS
GS
GS
GS
GS
GS
DS
DS
= 0 V, V
= 0 V, V
= 30 V, V
= 30 V, V
= 5 V, V
= 5 V, V
= V
= V
I
I
= 0 V, I
= 0 V, I
= 4.5 V, I
= 4.5 V, I
= 10 V, I
= 10 V, I
= 15 V, I
= 15 V, I
D
D
Channel-1
Channel-2
Channel-1
Channel-2
f = 1 MHz
Test Conditions
GS
GS
= 250 µA
= 250 µA
GS
GS
GS
GS
GS
GS
GS
GS
= 0 V, T
= 0 V, T
, I
, I
GS
GS
= 0 V, f = 1 MHz
= 0 V, f = 1 MHz
= 4.5 V, I
= 4.5 V, I
= 10 V, I
= 10 V, I
D
D
GS
GS
D
D
GS
GS
D
D
D
D
= 1 mA
= 1 mA
D
D
= 1 mA
= 1 mA
= ± 16 V
= ± 16 V
= 10 V
= 10 V
= 8 A
= 8 A
= 8 A
= 8 A
= 5 A
= 5 A
= 0 V
= 0 V
J
J
= 100 °C
= 100 °C
D
D
D
D
= 8 A
= 8 A
= 8 A
= 8 A
Ch-1
Ch-2
Ch-1
Ch-1
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Min.
30
30
20
20
1
1
S09-2109-Rev. B, 12-Oct-09
Document Number: 74450
0.0083
0.0095 0.0115
Typ.
0.014
0.016
1535
2290
0.05
12.5
205
360
117
4.1
5.6
3.4
1.8
1.9
35
- 6
40
47
91
29
39
17
3
4
a
0.0195
0.001
0.025
0.017
0.010
Max.
100
100
2.5
2.5
0.5
3.0
3.0
15
44
59
19
26
Unit
mA
µA
nC
pF
V
A
Ω
S
Ω