SI4618DY-T1-E3 Vishay, SI4618DY-T1-E3 Datasheet - Page 9
![MOSFET N-CH DUAL 30V 8-SOIC](/photos/5/42/54248/pkg_5498_sml.jpg)
SI4618DY-T1-E3
Manufacturer Part Number
SI4618DY-T1-E3
Description
MOSFET N-CH DUAL 30V 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Specifications of SI4618DY-T1-E3
Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
17 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6.7A, 11.4A
Vgs(th) (max) @ Id
2.5V @ 1mA
Gate Charge (qg) @ Vgs
44nC @ 10V
Input Capacitance (ciss) @ Vds
1535pF @ 15V
Power - Max
1.38W, 2.35W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
N Channel
Continuous Drain Current Id
7.4A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
14mohm
Rds(on) Test Voltage Vgs
16V
Threshold Voltage Vgs Typ
2.5V
Configuration
Dual
Resistance Drain-source Rds (on)
0.017 Ohms, 0.01 Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
16 V
Continuous Drain Current
6.7 A, 11.4 A
Power Dissipation
1.38 W, 2.35 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4618DY-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4618DY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 500
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 74450
S09-2109-Rev. B, 12-Oct-09
0.001
0.01
10
10
10
10
10
10
100
0.1
10
-2
-3
-4
-6
-1
-5
1
0.00
0
Source-Drain Diode Forward Voltage
20 V
0.2
25
Reverse Current (Schottky)
V
V
SD
SD
- Source-to-Drain Voltage (V)
- Source-to-Drain Voltage (V)
25 °C
150 °C
0.4
50
0.6
75
30 V
Limited by R
0.01
10 V
100
0.1
10
1
0
0.8
100
1 .
* V
Safe Operating Area, Junction-to-Ambient
GS
DS(on)
1.0
125
*
V
minimum V
DS
- Drain-to-Source Voltage (V)
1.2
150
Single Pulse
1
T
A
= 25 °C
GS
at which R
10
DS(on)
0.05
0.04
0.03
0.02
0.01
0.00
200
160
120
is specified
80
40
0
0
0 .
0
1 ms
10 ms
100 ms
10 s
1 s
DC
0
I
1
D
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
= 8 A
1
1
0
0
2
V
0.01
GS
3
- Gate-to-Source Voltage (V)
4
Time (s)
0.1
125 °C
5
Vishay Siliconix
25 °C
6
Si4618DY
7
www.vishay.com
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10
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