IRF7307QTRPBF International Rectifier, IRF7307QTRPBF Datasheet

MOSFET N/P-CH DUAL 20V 8SOIC

IRF7307QTRPBF

Manufacturer Part Number
IRF7307QTRPBF
Description
MOSFET N/P-CH DUAL 20V 8SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets
1.IRF7307QTRPBF.pdf (10 pages)
2.IRF7307.pdf (10 pages)

Specifications of IRF7307QTRPBF

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
50 mOhm @ 2.6A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
5.2A, 4.3A
Vgs(th) (max) @ Id
700mV @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 4.5V
Input Capacitance (ciss) @ Vds
660pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Module Configuration
Dual
Transistor Polarity
N And P Channel
Continuous Drain Current Id
5.2A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
50mohm
Rds(on) Test Voltage Vgs
12V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7307QTRPBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
IRF7307QTRPBF
Manufacturer:
IR
Quantity:
20 000
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
Thermal Resistance Ratings
Description
Absolute Maximum Ratings
I
I
I
I
P
V
dv/dt
T
D
D
D
DM
R
J,
D
GS
@ T
@ T
@ T
T
Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
@T
JA
STG
A
A
A
A
= 25°C
= 25°C
= 70°C
= 25°C
10 Sec. Pulse Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Parameter
Parameter
GS
GS
GS
@ 4.5V
@ 4.5V
@ 4.5V
G 2
G 1
S 2
S 1
N -C H AN N EL M O SF ET
1
2
3
P-C H AN N E L M OS FE T
4
T op V iew
N-Channel
5.7
5.2
4.1
5.0
21
Typ.
–––
HEXFET
8
7
6
5
-55 to + 150
D 1
D 1
D 2
D 2
Max.
0.016
± 12
2.0
S O -8
R
®
V
DS(on)
IRF7307
DSS
Power MOSFET
Max.
62.5
P-Channel
-5.0
-4.7
-4.3
-3.4
PD - 9.1242B
-17
0.050
N-Ch
20V
Units
°C/W
0.090
P-Ch
-20V
Units
W/°C
V/ns
°C
W
A
V
8/25/97

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IRF7307QTRPBF Summary of contents

Page 1

... Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power ...

Page 2

IRF7307 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS I ...

Page 3

VGS TOP 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V B OTTOM 1. 20µ 1 ° ...

Page 4

IRF7307 150° 25° Sour ce-to-Dr ain Voltage ( V) SD Fig 7. Typical ...

Page 5

VGS TOP - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V B OTTOM - 1 -1.5 V 20µ ...

Page 6

IRF7307 150° Sour ce-to-Drain V oltage (V) SD Fig 18. Typical Source-Drain Diode Forward Voltage 5.0 ...

Page 7

D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 0.001 Fig 23. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient N & P-Channel 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7307 P ...

Page 8

IRF7307 D.U Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Reverse Recovery Current Re-Applied Voltage *** Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations - ** dv/dt ...

Page 9

Package Outline SO-8 Outline Dimensions are shown in millimeters (inches 0.25 (.010 ...

Page 10

IRF7307 Tape & Reel Information SO-8 Dimensions are shown in millimeters (inches) T ERM INAT DIR ECT IO N 330.00 ( 13.000) MAX . ...

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