IRF7307QTRPBF International Rectifier, IRF7307QTRPBF Datasheet - Page 4

• Manufacturer Part Number: IRF7307QTRPBF
• Description: MOSFET N/P-CH DUAL 20V 8SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7307QTRPBF

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 2.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.2A, 4.3A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 660pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Module Configuration: Dual
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 5.2A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 50mohm
• Rds(on) Test Voltage Vgs: 12V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7307QTRPBFTR

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6.0
5.0
4.0
3.0
2.0
1.0
0.0
100
0.1
10
1
25
12V
0.0
V
GS
Same Type as D.U.T.
T = 150°C
V
J
50
Current Regulator
SD
T , Case Temperature
0.5
.2µF
C
, Source-to-Drain Voltage (V)
T = 25°C
50KΩ
3mA
75
J
1.0
Current Sampling Resistors
.3µF
100
I
G
1.5
( C)
125
°
D.U.T.
2.0
V
GS
I
D
= 0V
150
2.5
+
A
-
V
DS
V
90%
10%
V
DS
GS
V
G
100
10
1
0.1
Q
t
T
T
Single Pulse
d(on)
GS
A
J
= 25 C
= 150 C
OPERATION IN THIS AREA LIMITED
V
DS
°
°
≤ 0.1 %
≤ 1
t
r
, Drain-to-Source Voltage (V)
Charge
Q
Q
1
GD
G
BY R
DS(on)
10
t
d(off)
100us
1ms
10ms
t
f
+
100
-
4