IRF7530TRPBF International Rectifier, IRF7530TRPBF Datasheet - Page 3
![MOSFET N-CH DUAL 20V 5.4A MICRO8](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7530TRPBF
Manufacturer Part Number
IRF7530TRPBF
Description
MOSFET N-CH DUAL 20V 5.4A MICRO8
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7530TRPBF.pdf
(8 pages)
Specifications of IRF7530TRPBF
Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
30 mOhm @ 5.4A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
5.4A
Vgs(th) (max) @ Id
1.2V @ 250µA
Gate Charge (qg) @ Vgs
26nC @ 4.5V
Input Capacitance (ciss) @ Vds
1310pF @ 15V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
Micro8™
Configuration
Dual
Transistor Polarity
Dual N-Channel
Resistance Drain-source Rds (on)
30 mOhms
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
5.4 A
Power Dissipation
1.3 W
Gate Charge Qg
18 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7530TRPBF
IRF7530TRPBFTR
IRF7530TRPBFTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7530TRPBF
Manufacturer:
International Rectifier
Quantity:
55 056
Part Number:
IRF7530TRPBF
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
www.irf.com
100
100
10
Fig 3. Typical Transfer Characteristics
10
Fig 1. Typical Output Characteristics
2.0
0.1
TOP
BOTTOM
V
V
DS
VGS
7.00V
5.00V
4.50V
3.50V
3.00V
2.70V
2.50V
2.25V
2.5
GS
T = 25 C
, Drain-to-Source Voltage (V)
J
, Gate-to-Source Voltage (V)
1
°
3.0
2.25V
V
20µs PULSE WIDTH
3.5
20µs PULSE WIDTH
T = 25 C
DS
J
T = 150 C
J
= 15V
10
°
4.0
°
4.5
100
Fig 2. Typical Output Characteristics
100
2.0
1.5
1.0
0.5
0.0
10
Fig 4. Normalized On-Resistance
0.1
-60 -40 -20
TOP
BOTTOM
I =
D
5.0A
V
DS
VGS
7.00V
5.00V
4.50V
3.50V
3.00V
2.70V
2.50V
2.25V
T , Junction Temperature ( C)
Vs. Temperature
J
, Drain-to-Source Voltage (V)
0
1
20 40 60
2.25V
20µs PULSE WIDTH
T = 150 C
J
80 100 120 140 160
10
°
V
°
GS
=
4.5V
3
100