SI1917EDH-T1-E3 Vishay, SI1917EDH-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI1917EDH-T1-E3
• Description: MOSFET P-CH DUAL 12V SC70-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1917EDH-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 370 mOhm @ 1A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 1A
• Vgs(th) (max) @ Id: 450mV @ 100µA
• Gate Charge (qg) @ Vgs: 2nC @ 4.5V
• Power - Max: 570mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.37 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 1 A
• Power Dissipation: 570 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -1.15A
• Drain Source Voltage Vds: -12V
• On Resistance Rds(on): 800mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: -450mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1917EDH-T1-E3TR

Si1917EDH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.1
- 0.2
0.01
0.1
0.3
0.2
0.1
0.1
0
3
1
2
1
- 50
10
0
-4
0.05
0.2
0.1
Duty Cycle = 0.5
- 25
I
Single Pulse
D
Source-Drain Diode Forward Voltage
0.2
= 100 µA
V
SD
0
0.02
-
Threshold Voltage
10
0.4
S
T
o
J
-3
25
u
- Temperature (°C)
c r
- e
o t
T
0.6
50
D -
J
= 150 °C
a r
n i
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
V
o
0.8
a t l
10
g
T
-2
100
e
J
= 25 °C
(
) V
1.0
125
Square Wave Pulse Duration (s)
150
1.2
10
-1
1
2.0
1.6
1.2
0.8
0.4
0.0
0.01
5
4
3
2
1
0
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1
0.1
V
GS
1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
0
P
- Gate-to-Source Voltage (V)
DM
JM
- T
2
t
1
A
1
= P
Time (s)
t
2
DM
S10-1054-Rev. B, 03-May-10
Z
Document Number: 71414
thJA
100
thJA
t
t
3
1
2
10
(t)
= 170 °C/W
I
D
= - 1 A
4
100
6
0
0
6
5
0
0