FDC6302P Fairchild Semiconductor, FDC6302P Datasheet - Page 4
![MOSFET P-CH DUAL 25V SSOT6](/photos/5/44/54442/supersot-6_pkg_sml.jpg)
FDC6302P
Manufacturer Part Number
FDC6302P
Description
MOSFET P-CH DUAL 25V SSOT6
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDC6302P.pdf
(5 pages)
Specifications of FDC6302P
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
10 Ohm @ 200mA, 4.5V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
120mA
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
0.31nC @ 4.5V
Input Capacitance (ciss) @ Vds
11pF @ 10V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
6-SSOT, SuperSOT-6
Configuration
Dual
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
10 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
0.135 S
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
8 V
Continuous Drain Current
0.12 A
Power Dissipation
900 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
-200mA
Drain Source Voltage Vds
-25V
On Resistance Rds(on)
10ohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-1V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDC6302P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDC6302P-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Typical Electrical And Thermal Characteristics
0.05
0.02
0.01
8
6
4
2
0
0.8
0.5
0.2
0.1
0
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area.
1
R
I
SINGLE PULSE
D
0.05
0.02
0.01
0.5
0.2
0.1
JA
= -0.2A
0.0001
V
1
T = 25°C
GS
=See Note 1b
A
0.1
= -2.7V
2
D = 0.5
- V
0.2
0.1
0.05
DS
0.02
0.01
Single Pulse
Q
, DRAIN-SOURCE VOLTAGE (V)
g
, GATE CHARGE (nC)
0.2
0.001
5
Figure 11. Transient Thermal Response Curve
Note: Thermal characterization performed using the conditions described in note 1b.Transient thermal
response will change depending on the circuit board design.
V
DS
= -5V
0.3
10
-15
0.4
0.01
-10
20
0.5
40
0.1
t , TIME (sec)
1
25
15
10
5
4
3
2
1
0
5
3
2
1
0.01
0.1
Figure 8. Capacitance Characteristics.
Figure 10. Single Pulse Maximum Power
f = 1 MHz
V
GS
1
.
= 0 V
Dissipation.
0.3
0.1
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
P(pk)
1
T - T
Duty Cycle, D = t / t
10
J
R
1
R
JA
t
1
A
JA
(t) = r(t) * R
t
= P * R
2
2
= See Note 1b
R
10
JA
1
SINGLE PULSE
(t)
JA
5
JA
2
100
T = 25°C
=See note 1b
A
10
C iss
C oss
C rss
300
FDC6302P Rev.C
100
15
300
25