DMC3021LSD-13 Diodes Inc, DMC3021LSD-13 Datasheet - Page 2

• Manufacturer Part Number: DMC3021LSD-13
• Description: MOSFET N/P-CH 30V 8.5A/7A SO8
• Manufacturer: Diodes Inc

Specifications of DMC3021LSD-13

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 21 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.5A, 7A
• Vgs(th) (max) @ Id: 2.1V @ 250µA
• Gate Charge (qg) @ Vgs: 16.1nC @ 10V
• Input Capacitance (ciss) @ Vds: 767pF @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 14 mOhms
• Gate Charge Qg: 7.8 nC
• Forward Transconductance Gfs (max / Min): 8.1 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 8.5 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DMC3021LSD-13DITR

Electrical Characteristics N-CHANNEL – Q1
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (4.5V)
Total Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
DMC3021LSD
Document number: DS32152 Rev. 1 - 2
30
25
20
15
10
5
0
0
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
DS
Characteristic
0.5
V
GS
V
= 4.5V
GS
= 8.0V
J
= 25°C
1
V
V
GS
GS
V
GS
1.5
= 3.0V
= 2.5V
= 2.0V
Symbol
R
2
BV
V
www.diodes.com
DS (ON)
t
t
I
C
I
|Y
V
C
C
Q
Q
D(on)
D(off)
GS(th)
DSS
GSS
R
Q
Q
oss
t
t
SD
DSS
iss
rss
gs
gd
fs
r
f
g
g
g
|
@T
2 of 8
A
= 25°C unless otherwise specified
Min
30
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
30
25
20
15
10
1.45
16.1
26.3
8.55
Typ
5
0
767
110
105
8.1
0.7
1.4
7.8
1.8
2.5
5.0
4.5
14
18
-
-
-
0
V
DS
±100
Max
Fig. 2 Typical Transfer Characteristics
1.0
2.1
1.0
V
21
32
= 5V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
GS
1
, GATE SOURCE VOLTAGE (V)
T = 85°C
A
T = 125°C
A
Unit
mΩ
T = 150°C
μA
nA
nC
nC
nC
nC
pF
pF
pF
ns
Ω
ns
ns
ns
A
V
V
S
V
2
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
V
I
V
R
D
T = -55°C
GS
DS
GS
DS
GS
GS
DS
GS
DS
DS
GS
GS
G
A
= 9A
= 6Ω
= 30V, V
= V
= 5V, I
= 10V, V
= 0V, V
T = 25°C
= 0V, I
= ±20V, V
= 10V, I
= 4.5V, I
= 0V, I
= 10V, V
= 10V, V
A
GS
Test Condition
DMC3021LSD
,
, I
I
C
D
S
D
3
GS
C
C
= 250μA
C
= 7A
= 1A
= 1A
GS
GS
DS
DS
= 250μA
= 7A
DS
= 5.6A
= 0V, f = 1MHz
= 0V
= 0V,
= 15V,
= 15V,
© Diodes Incorporated
= 0V
May 2010
4