FDG6308P Fairchild Semiconductor, FDG6308P Datasheet - Page 4

• Manufacturer Part Number: FDG6308P
• Description: MOSFET P-CH DUAL 20V SC70-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDG6308P

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 400 mOhm @ 600mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 600mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 2.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 153pF @ 10V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.4 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 2.1 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 0.6 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
5
4
3
2
1
0
0.01
Figure 9. Maximum Safe Operating Area.
0.1
10
0
Figure 7. Gate Charge Characteristics.
1
0.1
R
SINGLE PULSE
R
0.001
I
D
DS(ON)
0.01
V
JA
= -0.6A
T
0.1
0.3
GS
A
0.0001
= 415
1
= 25
= -4.5V
LIMIT
o
o
C/W
C
D = 0.5
-V
0.6
0.2
DS
0.1
0.05
SINGLE PULSE
, DRAIN-SOURCE VOLTAGE (V)
Q
0.02
0.01
g
1
, GATE CHARGE (nC)
0.9
0.001
DC
1s
Figure 11. Transient Thermal Response Curve.
100ms
1.2
Thermal characterization performed using the conditions described in Note 1.
Transient thermal response will change depending on the circuit board design.
10ms
V
DS
= -5V
10
1ms
1.5
100 s
-15V
0.01
1.8
-10V
100
2.1
t
1
, TIME (sec)
0.1
200
160
120
30
24
18
12
0.0001
80
40
6
0
0
Figure 8. Capacitance Characteristics.
0
Figure 10. Single Pulse Maximum
0.001
4
-V
Power Dissipation.
1
DS
C
C
C
, DRAIN TO SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
OSS
RSS
0.01
ISS
8
P(pk)
0.1
Duty Cycle, D = t
T
R
R
J
JA
- T
JA
10
(t) = r(t) + R
A
= 415 °C/W
t
12
1
= P * R
t
2
1
JA
SINGLE PULSE
R
1
(t)
JA
/ t
JA
T
FDG6308P Rev B (W)
2
16
A
10
= 415
= 25
V
f = 1MHz
GS
100
o
o
= 0 V
C
C/W
100
20