FDC6318P Fairchild Semiconductor, FDC6318P Datasheet - Page 3

MOSFET P-CH DUAL 12V SSOT-6

FDC6318P

Manufacturer Part Number
FDC6318P
Description
MOSFET P-CH DUAL 12V SSOT-6
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDC6318P

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
90 mOhm @ 2.5A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
2.5A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
8nC @ 4.5V
Input Capacitance (ciss) @ Vds
455pF @ 6V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
6-SSOT, SuperSOT-6
Configuration
Dual
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.09 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
8 S
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
2.5 A
Power Dissipation
960 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Module Configuration
Dual
Continuous Drain Current Id
2.5A
Drain Source Voltage Vds
-12V
On Resistance Rds(on)
90mohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
700mV
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Manufacturer
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Results/Discussion
Test: (Autoclave)
Lot
Q20070473AAACLV
Q20070473ABACLV
Q20070473ACACLV
Q20070473BAACLV
Q20070473BBACLV
Q20070473BCACLV
Q20070473CAACLV
Q20070473DAACLV
Q20070473EAACLV
Q20070473FAACLV
Test: (High Humidity, High Temp, Rev. Bias)
Lot
Q20070473CAH3TRB
Q20070473FAH3TRB
Q20070473FBH3TRB
Test: (High Temperature Gate Bias)
Lot
Q20070473AAHTGB
Q20070473BAHTGB
Device
FDC658AP
FDN338P
Device
FDC637BNZ
FDC638APZ
Device
FDC637BNZ
FDC637BNZ
FDC637BNZ
FDC638APZ
FDC638APZ
FDC638APZ
FDC658AP
FAN2558SX
FDC365P
FDN338P
168-HOURS
0/77
0/77
0/77
168-HOURS
0/77
0/77
96-HOURS
0/77
0/77
0/77
0/77
0/77
0/77
0/77
0/77
0/77
0/77
500-HOURS
0/77
0/77
0/77
500-HOURS
0/77
1000-HOURS
0/77
0/77
0/77
1000-HOURS
0/77
Failure Code
Failure Code
Failure Code
Pg. 3

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