FDS9934C Fairchild Semiconductor, FDS9934C Datasheet - Page 4
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FDS9934C
Manufacturer Part Number
FDS9934C
Description
MOSFET N/P-CH DUAL 20V 8SOIC
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDS9934C.pdf
(8 pages)
Specifications of FDS9934C
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
30 mOhm @ 6.5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
6.5A, 5A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
9nC @ 4.5V
Input Capacitance (ciss) @ Vds
650pF @ 10V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.03 Ohm @ 4.5 V @ N Channel
Forward Transconductance Gfs (max / Min)
22 S, 14 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 10 V @ N Channel or +/- 12 V @ P Channel
Continuous Drain Current
6.5 A @ N Channel or 5 A @ P Channel
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Fall Time
4 ns, 9 ns
Rise Time
9 ns, 9 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDS9934C
Manufacturer:
FSC
Quantity:
42 500
Company:
Part Number:
FDS9934C
Manufacturer:
FAIRCHILD
Quantity:
50 000
Part Number:
FDS9934C
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDS9934C-NL
Manufacturer:
FSC
Quantity:
37 500
Company:
Part Number:
FDS9934C-NL
Manufacturer:
FAIRCHILD
Quantity:
12 648
Part Number:
FDS9934C-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Typical Characteristics: Q1 (N-Channel)
20
15
10
20
16
12
Figure 3. On-Resistance Variation with
1.6
1.4
1.2
0.8
0.6
5
0
8
4
0
Figure 1. On-Region Characteristics.
1
1
0
-50
Figure 5. Transfer Characteristics.
V
V
DS
I
D
GS
-25
= 5V
= 6.5A
V
= 4.5V
GS
3.5
= 4.5V
V
V
1.5
0.5
DS
GS
T
0
J
, DRAIN TO SOURCE VOLTAGE (V)
Temperature.
, GATE TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
25
3.0V
T
2
A
1
50
= -55
2.5V
o
C
75
25
o
C
2.0V
2.5
100
1.5
o
C)
125
o
C
125
150
3
2
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.001
0.01
0.11
0.09
0.07
0.05
0.03
0.01
100
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
with Source Current and Temperature.
0.1
2.4
2.2
1.8
1.6
1.4
1.2
0.8
10
1
2
1
0
1
0
Drain Current and Gate Voltage.
V
V
GS
GS
= 2.0V
= 0V
Gate-to-Source Voltage.
0.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
V
T
GS
5
2
A
2.5V
, GATE TO SOURCE VOLTAGE (V)
= 125
0.4
I
D
T
, DIRAIN CURRENT (A)
A
o
= 25
C
3.0V
o
C
0.6
10
3
25
T
o
C
A
3.5V
= 125
0.8
o
-55
C
o
4.0V
C
15
4
FDS9934C Rev D(W)
I
D
= 3.25A
1
4.5V
1.2
20
5