FDS6986AS Fairchild Semiconductor, FDS6986AS Datasheet - Page 5
![MOSFET N-CH DUAL 30V 8SOIC](/photos/5/42/54236/261-8-soic_sml.jpg)
FDS6986AS
Manufacturer Part Number
FDS6986AS
Description
MOSFET N-CH DUAL 30V 8SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDS6986AS.pdf
(10 pages)
Specifications of FDS6986AS
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
29 mOhm @ 6.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6.5A, 7.9A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 10V
Input Capacitance (ciss) @ Vds
550pF @ 10V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.029 Ohm @ 10 V Ohm @ Q1
Forward Transconductance Gfs (max / Min)
25 S, 15 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+ /- 16 V @ Q1
Continuous Drain Current
6.5 A @ Q1
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDS6986AS
Manufacturer:
FSC
Quantity:
46 200
Company:
Part Number:
FDS6986AS
Manufacturer:
MARVELL
Quantity:
3 200
Part Number:
FDS6986AS
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDS6986AS-NL
Manufacturer:
FSC
Quantity:
43 000
Part Number:
FDS6986AS-NL
Manufacturer:
FAI
Quantity:
20 000
Typical Characteristics: Q2
0.01
10
100
0.1
8
6
4
2
0
10
Figure 9. Maximum Safe Operating Area.
1
0
0.01
Figure 7. Gate Charge Characteristics.
SINGLE PULSE
R
I
D
θ JA
V
R
T
= 7.9A
GS
A
DS(ON)
= 135
= 25
= 10V
LIMIT
o
o
C/W
C
0.1
3
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Q
g
, GATE CHARGE (nC)
6
1
V
DS
DC
= 10V
10s
1s
100ms
15V
10ms
10
9
1ms
20V
100µs
100
12
800
600
400
200
50
40
30
20
10
0
0.001
0
Figure 8. Capacitance Characteristics.
0
C
Figure 10. Single Pulse Maximum
rss
0.01
4
V
Power Dissipation.
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
oss
0.1
t
8
1
, TIME (sec)
1
12
C
iss
SINGLE PULSE
R
θ JA
T
FDS6986AS Rev A (X)
10
A
16
= 135°C/W
= 25°C
V
f = 1MHz
GS
= 0 V
100
20