FDS6986AS Fairchild Semiconductor, FDS6986AS Datasheet - Page 6
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FDS6986AS
Manufacturer Part Number
FDS6986AS
Description
MOSFET N-CH DUAL 30V 8SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDS6986AS.pdf
(10 pages)
Specifications of FDS6986AS
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
29 mOhm @ 6.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6.5A, 7.9A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 10V
Input Capacitance (ciss) @ Vds
550pF @ 10V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.029 Ohm @ 10 V Ohm @ Q1
Forward Transconductance Gfs (max / Min)
25 S, 15 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+ /- 16 V @ Q1
Continuous Drain Current
6.5 A @ Q1
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDS6986AS
Manufacturer:
FSC
Quantity:
46 200
Company:
Part Number:
FDS6986AS
Manufacturer:
MARVELL
Quantity:
3 200
Part Number:
FDS6986AS
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDS6986AS-NL
Manufacturer:
FSC
Quantity:
43 000
Part Number:
FDS6986AS-NL
Manufacturer:
FAI
Quantity:
20 000
Typical Characteristics Q1
20
16
12
20
15
10
8
4
0
5
0
1.5
Figure 13. On-Resistance Variation with
1.6
1.4
1.2
0.8
0.6
0
Figure 11. On-Region Characteristics.
V
1
V
GS
-50
Figure 15. Transfer Characteristics.
DS
6.0V
= 10V
= 5V
V
I
D
GS
0.5
= 6.5A
-25
2
= 10V
V
GS
V
5.0V
DS
, GATE TO SOURCE VOLTAGE (V)
T
, DRAIN-SOURCE VOLTAGE (V)
0
J
, JUNCTION TEMPERATURE (
Temperature.
2.5
1
4.5V
25
4.0V
1.5
3
T
50
A
= -55
3.5V
o
75
C
3.5
2
3.0V
25
100
o
C)
o
C
2.5
4
125
125
2.5V
o
C
4.5
150
3
Figure 16. Body Diode Forward Voltage Variation
0.135
0.115
0.095
0.075
0.055
0.035
0.015
0.0001
0.001
0.01
3.4
2.6
2.2
1.8
1.4
0.6
Figure 12. On-Resistance Variation with
Figure 14. On-Resistance Variation with
100
0.1
10
with Source Current and Temperature.
3
1
1
2
0
0
T
Drain Current and Gate Voltage.
V
A
GS
= 25
= 0V
3.5V
o
Gate-to-Source Voltage.
C
V
0.2
V
GS
SD
V
= 3.0V
4.0V
, BODY DIODE FORWARD VOLTAGE (V)
GS
T
4
5
A
, GATE TO SOURCE VOLTAGE (V)
= 125
T
A
0.4
I
D
= 125
, DRAIN CURRENT (A)
o
C
4.5V
o
C
10
0.6
6
5.0V
25
o
C
0.8
6.0V
-55
15
8
o
FDS6986AS Rev A (X)
C
I
D
1
= 3.3 A
10V
1.2
20
10