FDS6986AS Fairchild Semiconductor, FDS6986AS Datasheet - Page 7
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FDS6986AS
Manufacturer Part Number
FDS6986AS
Description
MOSFET N-CH DUAL 30V 8SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDS6986AS.pdf
(10 pages)
Specifications of FDS6986AS
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
29 mOhm @ 6.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6.5A, 7.9A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 10V
Input Capacitance (ciss) @ Vds
550pF @ 10V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.029 Ohm @ 10 V Ohm @ Q1
Forward Transconductance Gfs (max / Min)
25 S, 15 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+ /- 16 V @ Q1
Continuous Drain Current
6.5 A @ Q1
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDS6986AS
Manufacturer:
FSC
Quantity:
46 200
Company:
Part Number:
FDS6986AS
Manufacturer:
MARVELL
Quantity:
3 200
Part Number:
FDS6986AS
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDS6986AS-NL
Manufacturer:
FSC
Quantity:
43 000
Part Number:
FDS6986AS-NL
Manufacturer:
FAI
Quantity:
20 000
Typical Characteristics Q1
0.01
10
100
Figure 19. Maximum Safe Operating Area.
0.1
8
6
4
2
0
10
Figure 17. Gate Charge Characteristics.
1
0
0.01
I
SINGLE PULSE
D
R
θ JA
= 6.5A
V
R
T
GS
DS(ON)
A
0.001
= 135
0.01
= 25
= 10V
0.1
0.0001
1
3
LIMIT
o
o
C/W
C
0.1
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Q
D = 0.5
g
, GATE CHARGE (nC)
6
0.2
0.1
V
0.05
DS
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
0.001
0.02
= 10V
0.01
1
15V
Figure 21. Transient Thermal Response Curve.
SINGLE PULSE
DC
9
10s
1s
100ms
20V
10ms
0.01
10
1ms
12
100µs
100
15
0.1
t
1
, TIME (sec)
50
40
30
20
10
1000
0
0.001
800
600
400
200
Figure 18. Capacitance Characteristics.
0
0
1
C
Figure 20. Single Pulse Maximum
rss
0.01
4
V
Power Dissipation.
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
C
oss
0.1
t
1
8
, TIME (sec)
P(pk)
Duty Cycle, D = t
T
R
R
J
θJA
- T
θJA
100
1
(t) = r(t) * R
A
t
12
= 135 °C/W
1
= P * R
t
2
C
iss
θJA
SINGLE PULSE
R
θJA
1
θ JA
(t)
/ t
T
10
FDS6986AS Rev A (X)
2
A
16
= 135°C/W
= 25°C
1000
V
f = 1MHz
GS
= 0 V
100
20