FDS6986AS Fairchild Semiconductor, FDS6986AS Datasheet - Page 8
![MOSFET N-CH DUAL 30V 8SOIC](/photos/5/42/54236/261-8-soic_sml.jpg)
FDS6986AS
Manufacturer Part Number
FDS6986AS
Description
MOSFET N-CH DUAL 30V 8SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDS6986AS.pdf
(10 pages)
Specifications of FDS6986AS
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
29 mOhm @ 6.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6.5A, 7.9A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 10V
Input Capacitance (ciss) @ Vds
550pF @ 10V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.029 Ohm @ 10 V Ohm @ Q1
Forward Transconductance Gfs (max / Min)
25 S, 15 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+ /- 16 V @ Q1
Continuous Drain Current
6.5 A @ Q1
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDS6986AS
Manufacturer:
FSC
Quantity:
46 200
Company:
Part Number:
FDS6986AS
Manufacturer:
MARVELL
Quantity:
3 200
Part Number:
FDS6986AS
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDS6986AS-NL
Manufacturer:
FSC
Quantity:
43 000
Part Number:
FDS6986AS-NL
Manufacturer:
FAI
Quantity:
20 000
Typical Characteristics
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits
similar characteristics to a discrete external Schottky
diode in parallel with a MOSFET. Figure 22 shows the
reverse recovery characteristic of the FDS6986AS.
For comparison purposes, Figure 23 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDS6690A).
Figure 22. FDS6986AS SyncFET body diode
Figure 23. Non-SyncFET (FDS6690A) body
diode reverse recovery characteristic.
reverse recovery characteristic.
12.5nS/DIV
12.5nS/DIV
(continued)
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase
the power in the device.
leakage versus drain-source voltage and
Figure 24. SyncFET body diode reverse
0.000001
0.00001
0.0001
0.001
0.01
0.1
0
5
temperature.
V
DS
, REVERSE VOLTAGE (V)
10
125
100
25
15
o
o
o
C
C
C
20
FDS6986AS Rev A (X)
25
30