FDS6898A Fairchild Semiconductor, FDS6898A Datasheet - Page 4
FDS6898A
Manufacturer Part Number
FDS6898A
Description
MOSFET N-CH DUAL 20V 9.4A 8SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDS6898A.pdf
(5 pages)
Specifications of FDS6898A
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
14 mOhm @ 9.4A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
9.4A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
23nC @ 4.5V
Input Capacitance (ciss) @ Vds
1821pF @ 10V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.014 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
47 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
9.4 A
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Module Configuration
Dual
Continuous Drain Current Id
9.4A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
14mohm
Rds(on) Test Voltage Vgs
4.5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS6898ATR
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Typical Characteristics
0.01
100
0.1
10
10
1
8
6
4
2
0
Figure 9. Maximum Safe Operating Area.
0.01
0
Figure 7. Gate Charge Characteristics.
0.001
0.01
0.1
I
D
SINGLE PULSE
R
R
0.0001
1
= 9.4A
DS(ON)
JA
V
T
5
GS
A
= 135
= 25
= 10V
LIMIT
0.1
D = 0.5
o
o
V
C
C/W
DS
0.2
0.05
10
0.1
, DRAIN-SOURCE VOLTAGE (V)
0.02
0.01
Q
g
, GATE CHARGE (nC)
SINGLE PULSE
15
0.001
1
DC
Figure 11. Transient Thermal Response Curve.
20
10s
1s
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
100ms
V
10ms
DS
25
= 5V
1ms
10
0.01
100µs
15V
30
10V
100
35
0.1
t , TIME (sec)
2500
2000
1500
1000
500
40
30
20
10
0
0.001
0
Figure 8. Capacitance Characteristics.
0
C
Figure 10. Single Pulse Maximum
1
RSS
C
0.01
OSS
V
Power Dissipation.
DS
5
, DRAIN TO SOURCE VOLTAGE (V)
10
0.1
t
1
C
, TIME (sec)
ISS
10
P(pk)
Duty Cycle, D = t
T
1
R
R
J
- T
JA
JA
100
(t) = r(t) * R
A
t
= 135 °C/W
1
= P * R
t
2
15
SINGLE PULSE
R
10
JA
T
FDS6898A Rev C (W)
V
f = 1MHz
A
=135°C/W
GS
= 25°C
JA
1
= 0 V
JA
(t)
/ t
2
1000
100
20