FDS6994S Fairchild Semiconductor, FDS6994S Datasheet
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FDS6994S
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FDS6994S Summary of contents
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... FDS6994S Dual Notebook Power Supply N-Channel PowerTrench SyncFet General Description The FDS6994S is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6994S contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency ...
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... mA, Referenced 250 uA, Referenced 8. 8 125 125 1.0 MHz mV 1.0 MHz GS Type Min Typ Max Units mV 500 All ±100 1 1 –2 mV – 17 33 2815 pF Q1 800 Q2 540 pF Q1 205 Q2 210 2.844444.9 Q1 2.6 4.6 FDS6994S Rev C2(W) ...
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... 300 A/µs (Note 6 100 A/µs (Note 2.3 A (Note 1.3 A (Note determined by the user's board design 125°C/W when mounted 0.02 in pad copper Type Min Typ Max Units 0.53 Q1 1.2 c) 135°C/W when mounted on a minimum pad. FDS6994S Rev C2(W) ...
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... C 0.001 0 2.5 3 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature 3.0V GS 3.5V 4.0V 4.5V 6.0V 10V DRAIN CURRENT ( 4. 125 GATE TO SOURCE VOLTAGE ( 125 -55 C 0.1 0.2 0.3 0.4 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS6994S Rev C2( 0.6 ...
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... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec 1MHz iss C oss C rss DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 135°C 25°C A 0.01 0 100 t , TIME (sec) 1 Power Dissipation. R ( 135 °C/W JA P(pk ( Duty Cycle 100 FDS6994S Rev C2(W) 30 1000 2 1000 ...
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... C 0.01 0.001 0.0001 3 Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. 4.0V 4.5V 6.0V 10V DRAIN CURRENT ( 3. 125 GATE TO SOURCE VOLTAGE ( 125 -55°C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS6994S Rev C2(W) 20 ...
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... Figure 20. Single Pulse Maximum 0.01 0 TIME (sec MHz iss C oss DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 135°C 25° 100 1000 t , TIME (sec) 1 Power Dissipation. R ( 135 C/W JA P(pk ( Duty Cycle 100 1000 FDS6994S Rev C2(W) ...
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... Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 22 shows the reverse recovery characteristic of the FDS6994S. 10nS/DIV Figure 22. FDS6994S SyncFET body diode reverse recovery characteristic. ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ GlobalOptoisolator™ Bottomless™ GTO™ Build it Now™ HiSeC™ ...