FDS6994S Fairchild Semiconductor, FDS6994S Datasheet

MOSFET N-CH DUAL 30V 8SOIC

FDS6994S

Manufacturer Part Number
FDS6994S
Description
MOSFET N-CH DUAL 30V 8SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®, SyncFET™r
Datasheet
1.FDS6994S.pdf (9 pages)

Specifications of FDS6994S

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
21 mOhm @ 6.9A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6.9A, 8.2A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 5V
Input Capacitance (ciss) @ Vds
800pF @ 15V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.021 Ohm @ 10 V @ Q1
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
6.9 A @ Q1 or 8.2 A @ Q2
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

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Part Number
Manufacturer
Quantity
Price
Company:
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Part Number:
FDS6994S
Manufacturer:
FSC
Quantity:
50 000
Company:
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Part Number:
FDS6994S
Manufacturer:
FSC
Quantity:
2 500
Company:
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Part Number:
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40 000
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Part Number:
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Manufacturer:
FSC
Quantity:
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Manufacturer:
FAIRCHILD/仙童
Quantity:
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Company:
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Part Number:
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Part Number:
FDS6994S-NL
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FDS6994S
Dual Notebook Power Supply N-Channel PowerTrench SyncFet
General Description
The FDS6994S is designed to replace two single SO-8
MOSFETs and Schottky diode in synchronous DC:DC
power supplies that provide various peripheral voltages
for notebook computers and other battery powered
electronic devices. FDS6994S contains two unique
30V, N-channel, logic level, PowerTrench MOSFETs
designed to maximize power conversion efficiency.
The high-side switch (Q1) is designed with specific
emphasis on reducing switching losses while the low-
side switch (Q2) is optimized to reduce conduction
losses. Q2 also includes an integrated Schottky diode
using Fairchild’s monolithic SyncFET technology.
2006 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
Symbol
D
J
DSS
GSS
D
, T
JA
JC
Device Marking
STG
FDS6994S
D2
SO-8
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D2
D1
D1
- Continuous
- Pulsed
S2
FDS6994S
Device
G2
Parameter
S1
G1
T
A
= 25°C unless otherwise noted
Reel Size
13”
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
(Note 1)
Features
Q2:
8.2A, 30V
Q1:
6.9A, 30V
Optimized to minimize conduction losses
Includes SyncFET Schottky body diode
Optimized for low switching losses
Low gate charge (85.5 nC typical)
5
6
7
8
Q2
8.2
30
30
16
Tape width
R
R
R
R
12mm
-55 to +150
Q1
Q2
DS(on)
DS(on)
DS(on)
DS(on)
1.6
0.9
78
40
2
1
= 15 m
= 17.5 m
= 21 m
= 26 m
October 2006
Q1
6.9
30
20
16
@ V
@ V
@ V
4
3
2
1
™
@ V
GS
GS
GS
GS
2500 units
= 10V
= 10V
= 4.5V
Quantity
= 4.5V
FDS6994S Rev C2(W)
Units
C/W
C/W
W
V
V
A
C

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FDS6994S Summary of contents

Page 1

... FDS6994S Dual Notebook Power Supply N-Channel PowerTrench SyncFet General Description The FDS6994S is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6994S contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency ...

Page 2

... mA, Referenced 250 uA, Referenced 8. 8 125 125 1.0 MHz mV 1.0 MHz GS Type Min Typ Max Units mV 500 All ±100 1 1 –2 mV – 17 33 2815 pF Q1 800 Q2 540 pF Q1 205 Q2 210 2.844444.9 Q1 2.6 4.6 FDS6994S Rev C2(W) ...

Page 3

... 300 A/µs (Note 6 100 A/µs (Note 2.3 A (Note 1.3 A (Note determined by the user's board design 125°C/W when mounted 0.02 in pad copper Type Min Typ Max Units 0.53 Q1 1.2 c) 135°C/W when mounted on a minimum pad. FDS6994S Rev C2(W) ...

Page 4

... C 0.001 0 2.5 3 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature 3.0V GS 3.5V 4.0V 4.5V 6.0V 10V DRAIN CURRENT ( 4. 125 GATE TO SOURCE VOLTAGE ( 125 -55 C 0.1 0.2 0.3 0.4 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS6994S Rev C2( 0.6 ...

Page 5

... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec 1MHz iss C oss C rss DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 135°C 25°C A 0.01 0 100 t , TIME (sec) 1 Power Dissipation. R ( 135 °C/W JA P(pk ( Duty Cycle 100 FDS6994S Rev C2(W) 30 1000 2 1000 ...

Page 6

... C 0.01 0.001 0.0001 3 Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. 4.0V 4.5V 6.0V 10V DRAIN CURRENT ( 3. 125 GATE TO SOURCE VOLTAGE ( 125 -55°C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS6994S Rev C2(W) 20 ...

Page 7

... Figure 20. Single Pulse Maximum 0.01 0 TIME (sec MHz iss C oss DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 135°C 25° 100 1000 t , TIME (sec) 1 Power Dissipation. R ( 135 C/W JA P(pk ( Duty Cycle 100 1000 FDS6994S Rev C2(W) ...

Page 8

... Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 22 shows the reverse recovery characteristic of the FDS6994S. 10nS/DIV Figure 22. FDS6994S SyncFET body diode reverse recovery characteristic. ...

Page 9

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ GlobalOptoisolator™ Bottomless™ GTO™ Build it Now™ HiSeC™ ...

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