FDS6994S Fairchild Semiconductor, FDS6994S Datasheet - Page 2

• Manufacturer Part Number: FDS6994S
• Description: MOSFET N-CH DUAL 30V 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®, SyncFET™r

Specifications of FDS6994S

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 21 mOhm @ 6.9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.9A, 8.2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 5V
• Input Capacitance (ciss) @ Vds: 800pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.021 Ohm @ 10 V @ Q1
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 6.9 A @ Q1 or 8.2 A @ Q2
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BV
I
I
Electrical Characteristics
Off Characteristics
On Characteristics
V
RD
I
g
Dynamic Characteristics
C
C
C
R
Symbol
DSS
GSS
D(on)
BV
FS
V
GS(th)
iss
oss
rss
G
DSS
S(on)
T
GS(th)
T
DSS
J
J
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Static Drain-Source
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
Gate-Body Leakage
Parameter
(Note 2)
V
V
I
I
V
V
V
V
V
V
V
V
V
V
V
V
V
I
I
V
V
D
D
f = 1.0 MHz
D
D
DS
DS
GS
GS
GS
GS
GS
GS
GS
DS
DS
DS
GS
GS
GS
DS
GS
= 1 mA, Referenced to 25 C
= 250 uA, Referenced to 25 C
= 1 mA, Referenced to 25 C
= 250 µA, Referenced to 25 C
= V
= V
= 10 V, I
= 10 V, I
= 4.5 V, I
= 10 V, I
= 10 V, I
= 4.5 V, I
= 10 V, V
= 10 V, I
= 10 V, I
= 15 V, V
= 15 mV, f = 1.0 MHz
= 0 V, I
= 0 V, I
= 24 V, V
= ±16 V, V
T
GS
GS
Test Conditions
A
, I
, I
= 25°C unless otherwise noted
D
D
D
D
D
D
D
D
D
D
= 1 mA
= 250 µA
D
D
DS
GS
= 1 mA
= 250 uA
GS
= 8.2A
= 8.2 A, T
= 6.9 A
= 6.9 A, T
= 8.2 A
= 6.9 A
= 7.6 A
= 6.2 A
DS
= 5 V
= 0 V,
= 0 V
= 0 V
J
J
= 125 C
= 125 C
Type Min Typ Max Units
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
All
30
20
42
41
1
1
30
30
2815
1.5
1.9
800
540
205
210
–2
–5
10
15
11
16
24
19
2.844444.9
2.6
90
23
24
±100
17.5
33.5
500
4.6
15
24
21
26
FDS6994S Rev C2(W)
3
3
1
mV/ C
mV/ C
m
pF
pF
pF
nA
V
A
S
V
A