FDS6994S Fairchild Semiconductor, FDS6994S Datasheet - Page 2
![MOSFET N-CH DUAL 30V 8SOIC](/photos/5/42/54236/261-8-soic_sml.jpg)
FDS6994S
Manufacturer Part Number
FDS6994S
Description
MOSFET N-CH DUAL 30V 8SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®, SyncFET™r
Datasheet
1.FDS6994S.pdf
(9 pages)
Specifications of FDS6994S
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
21 mOhm @ 6.9A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6.9A, 8.2A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 5V
Input Capacitance (ciss) @ Vds
800pF @ 15V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.021 Ohm @ 10 V @ Q1
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
6.9 A @ Q1 or 8.2 A @ Q2
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDS6994S
Manufacturer:
FSC
Quantity:
50 000
Company:
Part Number:
FDS6994S
Manufacturer:
FSC
Quantity:
2 500
Company:
Part Number:
FDS6994S
Manufacturer:
IR
Quantity:
40 000
Company:
Part Number:
FDS6994S
Manufacturer:
FSC
Quantity:
1 050
Part Number:
FDS6994S
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDS6994S-NL
Manufacturer:
FAIRCHILD
Quantity:
50 000
Part Number:
FDS6994S-NL
Manufacturer:
ON/FAI
Quantity:
20 000
BV
I
I
Electrical Characteristics
Off Characteristics
On Characteristics
V
RD
I
g
Dynamic Characteristics
C
C
C
R
Symbol
DSS
GSS
D(on)
BV
FS
V
GS(th)
iss
oss
rss
G
DSS
S(on)
T
GS(th)
T
DSS
J
J
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Static Drain-Source
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
Gate-Body Leakage
Parameter
(Note 2)
V
V
I
I
V
V
V
V
V
V
V
V
V
V
V
V
V
I
I
V
V
D
D
f = 1.0 MHz
D
D
DS
DS
GS
GS
GS
GS
GS
GS
GS
DS
DS
DS
GS
GS
GS
DS
GS
= 1 mA, Referenced to 25 C
= 250 uA, Referenced to 25 C
= 1 mA, Referenced to 25 C
= 250 µA, Referenced to 25 C
= V
= V
= 10 V, I
= 10 V, I
= 4.5 V, I
= 10 V, I
= 10 V, I
= 4.5 V, I
= 10 V, V
= 10 V, I
= 10 V, I
= 15 V, V
= 15 mV, f = 1.0 MHz
= 0 V, I
= 0 V, I
= 24 V, V
= ±16 V, V
T
GS
GS
Test Conditions
A
, I
, I
= 25°C unless otherwise noted
D
D
D
D
D
D
D
D
D
D
= 1 mA
= 250 µA
D
D
DS
GS
= 1 mA
= 250 uA
GS
= 8.2A
= 8.2 A, T
= 6.9 A
= 6.9 A, T
= 8.2 A
= 6.9 A
= 7.6 A
= 6.2 A
DS
= 5 V
= 0 V,
= 0 V
= 0 V
J
J
= 125 C
= 125 C
Type Min Typ Max Units
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
All
30
20
42
41
1
1
30
30
2815
1.5
1.9
800
540
205
210
–2
–5
10
15
11
16
24
19
2.844444.9
2.6
90
23
24
±100
17.5
33.5
500
4.6
15
24
21
26
FDS6994S Rev C2(W)
3
3
1
mV/ C
mV/ C
m
pF
pF
pF
nA
V
A
S
V
A