FDS6994S Fairchild Semiconductor, FDS6994S Datasheet - Page 5
![MOSFET N-CH DUAL 30V 8SOIC](/photos/5/42/54236/261-8-soic_sml.jpg)
FDS6994S
Manufacturer Part Number
FDS6994S
Description
MOSFET N-CH DUAL 30V 8SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®, SyncFET™r
Datasheet
1.FDS6994S.pdf
(9 pages)
Specifications of FDS6994S
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
21 mOhm @ 6.9A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6.9A, 8.2A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 5V
Input Capacitance (ciss) @ Vds
800pF @ 15V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.021 Ohm @ 10 V @ Q1
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
6.9 A @ Q1 or 8.2 A @ Q2
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDS6994S
Manufacturer:
FSC
Quantity:
50 000
Company:
Part Number:
FDS6994S
Manufacturer:
FSC
Quantity:
2 500
Company:
Part Number:
FDS6994S
Manufacturer:
IR
Quantity:
40 000
Company:
Part Number:
FDS6994S
Manufacturer:
FSC
Quantity:
1 050
Part Number:
FDS6994S
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDS6994S-NL
Manufacturer:
FAIRCHILD
Quantity:
50 000
Part Number:
FDS6994S-NL
Manufacturer:
ON/FAI
Quantity:
20 000
Typical Characteristics for Q2
0.01
100
0.1
10
10
Figure 9. Maximum Safe Operating Area.
1
8
6
4
2
0
0.1
Figure 7. Gate Charge Characteristics.
0
0.001
R
SINGLE PULSE
0.01
I
R
D
DS(ON)
0.1
=8.2A
JA
V
T
0.0001
1
GS
A
= 135
= 25
= 10V
LIMIT
10
o
o
C/W
C
V
DS
D = 0.5
, DRAIN-SOURCE VOLTAGE (V)
0.2
0.1
Q
0.05
1
0.02
g
0.01
, GATE CHARGE (nC)
20
DC
SINGLE PULSE
0.001
10s
1s
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
100ms
30
10ms
Figure 11. Transient Thermal Response Curve.
V
10
DS
1ms
= 10V
0.01
100 s
40
20V
15V
100
50
0.1
t
1
, TIME (sec)
4000
3000
2000
1000
50
40
30
20
10
0
0
0.001
Figure 8. Capacitance Characteristics.
0
Figure 10. Single Pulse Maximum
1
0.01
5
C
rss
V
Power Dissipation.
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
0.1
C
oss
t
1
10
, TIME (sec)
15
1
C
P(pk)
Duty Cycle, D = t
iss
T
10
R
20
R
J
- T
JA
JA
(t) = r(t) * R
100
SINGLE PULSE
R
A
= 135 °C/W
t
1
V
= P * R
f = 1MHz
JA
T
t
GS
2
FDS6994S Rev C2(W)
A
= 135°C/W
100
25
= 25°C
= 0 V
JA
1
JA
(t)
/ t
1000
2
30
1000