FDS6994S Fairchild Semiconductor, FDS6994S Datasheet - Page 5

• Manufacturer Part Number: FDS6994S
• Description: MOSFET N-CH DUAL 30V 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®, SyncFET™r

Specifications of FDS6994S

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 21 mOhm @ 6.9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.9A, 8.2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 5V
• Input Capacitance (ciss) @ Vds: 800pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.021 Ohm @ 10 V @ Q1
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 6.9 A @ Q1 or 8.2 A @ Q2
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics for Q2
0.01
100
0.1
10
10
Figure 9. Maximum Safe Operating Area.
1
8
6
4
2
0
0.1
Figure 7. Gate Charge Characteristics.
0
0.001
R
SINGLE PULSE
0.01
I
R
D
DS(ON)
0.1
=8.2A
JA
V
T
0.0001
1
GS
A
= 135
= 25
= 10V
LIMIT
10
o
o
C/W
C
V
DS
D = 0.5
, DRAIN-SOURCE VOLTAGE (V)
0.2
0.1
Q
0.05
1
0.02
g
0.01
, GATE CHARGE (nC)
20
DC
SINGLE PULSE
0.001
10s
1s
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
100ms
30
10ms
Figure 11. Transient Thermal Response Curve.
V
10
DS
1ms
= 10V
0.01
100 s
40
20V
15V
100
50
0.1
t
1
, TIME (sec)
4000
3000
2000
1000
50
40
30
20
10
0
0
0.001
Figure 8. Capacitance Characteristics.
0
Figure 10. Single Pulse Maximum
1
0.01
5
C
rss
V
Power Dissipation.
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
0.1
C
oss
t
1
10
, TIME (sec)
15
1
C
P(pk)
Duty Cycle, D = t
iss
T
10
R
20
R
J
- T
JA
JA
(t) = r(t) * R
100
SINGLE PULSE
R
A
= 135 °C/W
t
1
V
= P * R
f = 1MHz
JA
T
t
GS
2
FDS6994S Rev C2(W)
A
= 135°C/W
100
25
= 25°C
= 0 V
JA
1
JA
(t)
/ t
1000
2
30
1000