FDS6994S Fairchild Semiconductor, FDS6994S Datasheet - Page 7

• Manufacturer Part Number: FDS6994S
• Description: MOSFET N-CH DUAL 30V 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®, SyncFET™r

Specifications of FDS6994S

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 21 mOhm @ 6.9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.9A, 8.2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 5V
• Input Capacitance (ciss) @ Vds: 800pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.021 Ohm @ 10 V @ Q1
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 6.9 A @ Q1 or 8.2 A @ Q2
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics Q1
0.01
100
Figure 19. Maximum Safe Operating Area.
0.1
10
5
4
3
2
1
0
Figure 17. Gate Charge Characteristics.
1
0.01
0
0.001
0.01
0.1
R
SINGLE PULSE
R
0.0001
1
DS(ON)
JA
I
V
T
D
GS
A
= 135
= 6.9A
= 25
LIMIT
= 10V
2
D = 0.5
o
o
C
C/W
0.1
V
0.2
0.1
DS
0.05
, DRAIN-SOURCE VOLTAGE (V)
0.02
0.01
Q
g
SINGLE PULSE
, GATE CHARGE (nC)
0.001
4
1
DC
Figure 21. Transient Thermal Response Curve.
V
DS
10s
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
= 10V
6
100ms
1s
0.01
10ms
20V
10
1ms
8
100 s
15V
100
0.1
10
t
1
, TIME (sec)
1200
1000
800
600
400
200
50
40
30
20
10
0
0.001
0
Figure 18. Capacitance Characteristics.
1
0
C
Figure 20. Single Pulse Maximum
rss
0.01
5
V
Power Dissipation.
DS
C
, DRAIN TO SOURCE VOLTAGE (V)
oss
10
0.1
10
t
1
, TIME (sec)
P(pk)
Duty Cycle, D = t
1
T
15
R
J
R
- T
JA
JA
(t) = r(t) * R
100
C
A
t
iss
= 135
1
= P * R
t
2
10
20
o
C/W
SINGLE PULSE
R
JA
1
JA
T
JA
(t)
f = 1 MHz
V
/ t
A
GS
= 135°C/W
2
= 25°C
100
FDS6994S Rev C2(W)
= 0 V
25
1000
1000
30