SH8M3TB1 Rohm Semiconductor, SH8M3TB1 Datasheet - Page 5

• Manufacturer Part Number: SH8M3TB1
• Description: MOSFET N/P-CH 30V SOP8
• Manufacturer: Rohm Semiconductor

Specifications of SH8M3TB1

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 51 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5A, 4.5A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 3.9nC @ 5V
• Input Capacitance (ciss) @ Vds: 230pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOP
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 58 mOhms
• Forward Transconductance Gfs (max / Min): 3 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 5 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SH8M3TB1TR

P-ch
Electrical characteristic curves
○
SH8M3
c
www.rohm.com
2009 ROHM Co., Ltd. All rights reserved.
10000
0.001
1000
0.01
1000
100
0.1
100
10
10
0.01
1
10
0.0
Fig.4 Typical Transfer Characteristics
0.1
Fig.1 Typical Capacitance
DRAIN-SOURCE VOLTAGE : −V
GATE-SOURCE VOLTAGE : −V
0.5
Fig.7 Static Drain-Source
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
vs. Drain-Source Voltage
DRAIN CURRENT : −I
0.1
1.0
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
On-State Resistance
vs. Drain Current (Ι)
1.5
2.0
1
1
2.5
10
3.0
V
Pulsed
Ta=25°C
f=1MHz
V
V
Pulsed
D
DS
GS
GS
(A)
= −10V
=0V
3.5
GS
= −10V
DS
C
C
C
(V)
iss
oss
rss
(V)
100
4.0
10
10000
1000
1000
100
100
10
200
150
100
10
1
0.01
50
0.1
0
Fig.2 Switching Characteristics
0
Fig.5 Static Drain-Source
GATE-SOURCE VOLTAGE : −V
Fig.8 Static Drain-Source
t
d (off)
2
DRAIN CURRENT : −I
DRAIN CURRENT : −I
On-State Resistance vs.
Gate-Source Voltage
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
On-State Resistance
vs. Drain Current (ΙΙ)
4
t
0.1
f
5/5
I
I
t
D
D
d (on)
=−4.5A
=−2.0A
t
r
6
1
8
10
1
V
Pulsed
Ta=25°C
V
V
R
Pulsed
D
D
12
GS
DD
GS
G
(A)
Ta=25°C
Pulsed
(A)
=10Ω
= −4.5V
= −15V
= −10V
GS
14
(V)
10
10
16
0.01
1000
100
0.1
10
10
1
8
7
6
5
4
3
2
1
0
0.0
0.1
Fig.3 Dynamic Input Characteristics
0
SOURCE-DRAIN VOLTAGE : −V
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
Fig.6 Source Current vs.
Fig.9 Static Drain-Source
1
TOTAL GATE CHARGE : Qg (nC)
DRAIN CURRENT : −I
2
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
On-State Resistance
vs. Drain Current (ΙΙΙ)
Source-Drain Voltage
2009.12 - Rev.A
3
0.5
4
Data Sheet
1
5
6
1.0
7
Ta=25°C
V
I
R
Pulsed
D
D
V
Pulsed
DD
= −4.5A
G
(A)
8
GS
V
Pulsed
=10Ω
= −15V
GS
= −4V
SD
=0V
9
(V)
1.5
10
10